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Transport Properties and Sub-band Modulation of the SWCNT Based Nano-scale Transistors

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dc.contributor.author Sarkar, Niladri
dc.date.accessioned 2024-02-21T04:08:13Z
dc.date.available 2024-02-21T04:08:13Z
dc.date.issued 2019-02
dc.identifier.uri https://link.springer.com/chapter/10.1007/978-3-319-97604-4_24
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14391
dc.description.abstract We apply NEGF formalism on a Single Walled Carbon Nano Tube (SWCNT) based transistor under which it is treated as an open quantum system where the Schrodinger equation for the channel is given as (H + Σ)ψ(r) + (S) = Eψ(r). Here, (S) is the source term arising due to the channel/contact hybridization and ‘Σ’ is the self-energy term which is a complex matrix whose real part is related to the corrections in the channel eigenstate energies and imaginary part is related to the broadening of the channel eigenstates. For example, a one-level channel gets hybridized to a Lorentzian density of states under contact. en_US
dc.language.iso en en_US
dc.publisher Springer en_US
dc.subject Physics en_US
dc.subject Open quantum system en_US
dc.subject SWCNTs en_US
dc.subject Sub-bands en_US
dc.subject Non-equilibrium Green's function (NEGF) en_US
dc.title Transport Properties and Sub-band Modulation of the SWCNT Based Nano-scale Transistors en_US
dc.type Article en_US


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