| dc.contributor.author |
Mishra, Rashmi Ranjan |
|
| dc.date.accessioned |
2024-02-21T10:04:19Z |
|
| dc.date.available |
2024-02-21T10:04:19Z |
|
| dc.date.issued |
2009-11 |
|
| dc.identifier.uri |
https://www.proquest.com/openview/27e262be6aa7cea525b01e32d4f50b76/1?cbl=136092&pq-origsite=gscholar&parentSessionId=gJKETeOej9in0yDpX4PMKw7xdCdKrtOyBrFLjIZkBEU%3D |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14403 |
|
| dc.description.abstract |
As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. Carbon nanotube field effect transistor (CNTFET) is found to be one of the most promising alternatives for bulk Si MOSFET. In this work we have simulated a cylindrical CNTFET. Based on the simulation results both output and transfer characteristic curves are plotted and analyzed. We have also studied the effect of different dielectric materials used as gate insulator. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IJRTE |
en_US |
| dc.subject |
Physics |
en_US |
| dc.subject |
Nanotubes |
en_US |
| dc.subject |
Transistors |
en_US |
| dc.subject |
MOSFET dimensional scaling |
en_US |
| dc.subject |
Characteristic curve |
en_US |
| dc.subject |
Dielectric materials |
en_US |
| dc.subject |
Saturation current |
en_US |
| dc.title |
Carbon Nanotube Field Effect Transistor: Basic Characterization and Effect of High Dielectric Material |
en_US |
| dc.type |
Article |
en_US |