| dc.contributor.author |
Gangopadhyay, Subhashis |
|
| dc.date.accessioned |
2024-03-05T09:49:39Z |
|
| dc.date.available |
2024-03-05T09:49:39Z |
|
| dc.date.issued |
2009-09 |
|
| dc.identifier.uri |
https://pubs.acs.org/doi/full/10.1021/jp906066z |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14526 |
|
| dc.description.abstract |
Graphene films have been formed by annealing Ni thin films at 800 °C under vacuum conditions. The Ni thin films are deposited on Si/SiO2 and, following annealing, have a polycrystalline morphology with grain sizes on the order of 1 μm. Following growth, the Ni is removed by etching, and the graphene is transferred as a single continuous layer onto a separate surface. The fraction of monolayer graphene is investigated using optical and electron microscopy and Raman spectroscopy and is shown to be >75%. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
ACS |
en_US |
| dc.subject |
Physics |
en_US |
| dc.subject |
Annealing (metallurgy) |
en_US |
| dc.subject |
Layers |
en_US |
| dc.subject |
Thin films |
en_US |
| dc.subject |
Two dimensional materials |
en_US |
| dc.title |
Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films |
en_US |
| dc.type |
Article |
en_US |