| dc.contributor.author | Gangopadhyay, Subhashis | |
| dc.date.accessioned | 2024-03-06T05:34:31Z | |
| dc.date.available | 2024-03-06T05:34:31Z | |
| dc.date.issued | 2006-11 | |
| dc.identifier.uri | https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200671592 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14540 | |
| dc.description.abstract | A novel two-step growth method for creating InGaN quantum dots (QDs) was developed by using a combination of an Inx Ga1–x N nucleation layer with a platelet structure and an Iny Ga1–y N formation layer with an indium content lower than that of the Inx Ga1–x N nucleation layer. The realized QDs were investigated by micro-photoluminescence measurements. We observed sharp emission lines at 4 K with a spectral width down to the spectral resolution limit of the experimental setup of 0.17 meV. This growth concept is discussed in comparison with conventional growth method | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Wiley | en_US |
| dc.subject | Physics | en_US |
| dc.subject | InGaN quantum dots | en_US |
| dc.title | A novel approach for the growth of InGaN quantum dots | en_US |
| dc.type | Article | en_US |
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