| dc.contributor.author |
Gangopadhyay, Subhashis |
|
| dc.date.accessioned |
2024-03-06T09:39:15Z |
|
| dc.date.available |
2024-03-06T09:39:15Z |
|
| dc.date.issued |
2012-02 |
|
| dc.identifier.uri |
https://iopscience.iop.org/article/10.1088/0953-8984/24/8/084009/meta |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14545 |
|
| dc.description.abstract |
We use a noncontact atomic force microscope in the qPlus configuration to investigate the structure and influence of defects on the Si(100) surface. By applying millivolt biases, simultaneous tunnel current data is acquired, providing information about the electronic properties of the surface at biases often inaccessible during conventional STM imaging, and highlighting the difference between the contrast observed in NC-AFM and tunnel current images. We also show how NC-AFM (in the absence of tunnel current) can be used to manipulate both the clean c(4 × 2) surface and dopant-related defects. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IOP |
en_US |
| dc.subject |
Physics |
en_US |
| dc.subject |
NC-AFM |
en_US |
| dc.subject |
Si(100) |
en_US |
| dc.title |
Imaging and manipulation of the Si(100) surface by small-amplitude NC-AFM at zero and very low applied bias |
en_US |
| dc.type |
Article |
en_US |