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qPlus atomic force microscopy of the Si(100) surface: Buckled, split-off, and added dimers

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dc.contributor.author Gangopadhyay, Subhashis
dc.date.accessioned 2024-03-06T09:51:40Z
dc.date.available 2024-03-06T09:51:40Z
dc.date.issued 2009-08
dc.identifier.uri https://pubs.aip.org/aip/apl/article/95/6/063112/338392
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14548
dc.description.abstract Dimer configurations at the Si(100) surface have been studied with noncontact atomic force microscopy in the qPlus mode at 77 K, using both large (10 nm peak to peak) and small (0.5 nm peak to peak) oscillation amplitudes. In addition to the ⁠, ⁠, and reconstructions of the pristine surface, a variety of defect types including ad-dimers, vacancies, and split-off dimers have been imaged. Our data appear at odds with the currently accepted structural model for split-off dimers. At low oscillation amplitudes the degree of apparent dimer buckling can be “tuned” by varying the frequency shift set point. en_US
dc.language.iso en en_US
dc.publisher AIP en_US
dc.subject Physics en_US
dc.subject Ab-initio methods en_US
dc.subject Density Functional Theory (DFT) en_US
dc.subject Doping en_US
dc.subject Electronic transport en_US
dc.subject Tuning forks en_US
dc.subject Atomic force microscopy (AFM) en_US
dc.subject Scanning Tunneling Microscopy (STM) en_US
dc.subject Fourier analysis en_US
dc.title qPlus atomic force microscopy of the Si(100) surface: Buckled, split-off, and added dimers en_US
dc.type Article en_US


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