| dc.description.abstract |
Radiation and its effect on neighboring nodes are critical not only for space applications but also for terrestrial applications at modern lower-technology nodes. This may cause static random-access memory (SRAM) failures due to single- and multi-node upset. Hence, this article proposes a 14T radiation-hardened-based SRAM cell to overcome soft errors for space and critical terrestrial applications. Simulation results show that the proposed cell can be resilient to any single event upset and single event double node upset at its storage nodes. This cell uses less power than others. The hold, read, and write stability increases compared with most considered cells. The higher critical charge of the proposed SRAM increases radiation resistance. Simulation results demonstrate that out of all compared SRAMs, only DNUSRM and the proposed SRAM show 0% probability of logical flipping. Also, other parameters such as total critical charge, write stability, read stability, hold stability, area, power, sensitive area, write speed, and read speed of the proposed SRAM are improved by –19.1%, 5.22%, 25.7%, –5.46%, 22.5%, 50.6%, 60.0%, 17.91%, and 0.74% compared with DNUSRM SRAM. Hence, the better balance among the parameters makes the proposed cell more suitable for space and critical terrestrial applications. Finally, the post-layout and Monte Carlo simulation validate the efficiency of SRAMs. |
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