| dc.description.abstract |
Hydrogen generation from splitting of water under the photoelectrochemical (PEC) pathway is considered as the most promising strategy for covering the upcoming fuel crisis by taking care of all environmental issues. In this context, In2S3 can be explored as it is a visible light-active semiconductor with an appropriate band alignment with the water redox potential. Herein, In2S3 nanosheets are developed by the chemical method. The nanosheets of In2S3 absorb high visible light due to the manifold inside scattering and reflection. The PEC activity of In2S3 is enhanced because of the increase in the light absorbance of the materials. In the present work, at 1.18 V versus RHE in 3.5 wt % NaCl, a maximum 2.07 mA/cm2 photocurrent density can be achieved by In2S3 nanosheets. However, In2S3 suffers strongly due to photo-corrosion. To improve the efficacy of the In2S3 nanosheets in saline water, the charge-carrier transportation ability of In2S3 is aimed to increase by decorating S-C3N4-dots on In2S3. The heterostructure of type-II is developed by sensitization of S-C3N4-dots on In2S3. It increases both the transportation of charge carriers as well as separation. In the heterostructure, the transient decay time (τ) increases, which indicates a decrease in photogenerated charge-carrier recombination. S-C3N4-dots also act as an optical antenna and increase the range of visible light absorbance of In2S3. The heterostructure can generate ∼2.38-fold higher photocurrent density of 1.18 V versus RHE in 3.5 wt % NaCl. The photoconversion efficiency of the heterostructure is 0.88% at 0.95 V versus RHE. The nanosheets of In2S3 and In2S3/S-C3N4-dots are stable, and photocurrent density is measured up to 2700 s under continuous back-illumination conditions. |
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