| dc.description.abstract |
Temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) of ultrathin InAs quantum wells (QWs) in GaAs matrix have been investigated to understand the optical properties of carriers. Samples containing different thicknesses of InAs (0.5, 0.75, 1, 1.2, 1.4 monolayers) have been used for this study. The PL peak position of InAs with temperature does not follow the Varshni model at low temperatures. The activation energy (EA) of these QWs has been calculated from TDPL. As expected, the thinnest QW sample (0.5 monolayer) results in the smallest EA of 23 meV, whereas the thickest QW sample (1.4 monolayer) results in the highest EA of 79 meV. Carrier lifetime has been calculated from TRPL measurement for varying temperatures. At 10 K, the carrier lifetime increased almost linearly from 250 to 800 ps with the InAs QW thickness. Thicker InAs QW results in a longer carrier lifetime, which has been explained by the carrier escape model. Higher temperatures resulted in a decrease in carrier lifetime, which suggests carrier escape is dominating the temporal decay behavior. |
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