| dc.contributor.author |
Kumar, Rahul |
|
| dc.date.accessioned |
2024-12-13T10:19:09Z |
|
| dc.date.available |
2024-12-13T10:19:09Z |
|
| dc.date.issued |
2024 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/abstract/document/10465995 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16619 |
|
| dc.description.abstract |
Gallium Oxide (Ga 2 O 3 ), as an ultra-wide bandgap semiconductor, has shown great promise for power electronics. Due to its chemical and thermal stability and biocompatibility, it can be an excellent material for biosensing applications. In this pioneering work, we have explored the possibility of Ga 2 O 3 metal oxide semiconductor-high electron mobility transistor (MOSHEMT) for biosensing applications. We have tested neutral biomolecules on cavity-based MOSHEMT biosensors. Initial simulation results are promising enough to test the experimental viability of the Ga 2 O 3 field effect transistor (FET) as a biosensor. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Ga₂O₃ |
en_US |
| dc.subject |
High electron mobility transistor (HEMT) |
en_US |
| dc.subject |
Biosensors |
en_US |
| dc.subject |
Sensitivity |
en_US |
| dc.subject |
Biomolecule |
en_US |
| dc.title |
AlN/β-Ga₂O₃ MOSHEMT as Biosensor |
en_US |
| dc.type |
Article |
en_US |