| dc.contributor.author |
Kumar, Rahul |
|
| dc.date.accessioned |
2024-12-13T10:47:24Z |
|
| dc.date.available |
2024-12-13T10:47:24Z |
|
| dc.date.issued |
2023 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/abstract/document/10127322 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16622 |
|
| dc.description.abstract |
We have investigated the DC characteristics of Ga 2 O 3 -based metal semiconductor field effect transistor (MESFET). Different channel thicknesses namely 1000 nm, 500 nm, 250 nm and 100 nm have been employed for simulation. By reducing the channel thickness, depletion mode (D-mode) devices turned into enhancement mode (E-mode) devices. Peculiar exponential output characteristics have been observed in the subthreshold region. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
MESFET |
en_US |
| dc.subject |
Gallium oxide (Ga2O3) |
en_US |
| dc.subject |
Depletion mode |
en_US |
| dc.subject |
Enhancement mode |
en_US |
| dc.subject |
Schottky |
en_US |
| dc.title |
Theoretical Investigation of Thickness Variation on Ga2O3 MESFET: Depletion to Enhancement Mode Transition |
en_US |
| dc.type |
Article |
en_US |