| dc.contributor.author |
Bhatt, Upendra Mohan |
|
| dc.date.accessioned |
2025-01-21T04:03:43Z |
|
| dc.date.available |
2025-01-21T04:03:43Z |
|
| dc.date.issued |
2018 |
|
| dc.identifier.uri |
https://doi.org/10.7567/SSDM.2018.B-7-02 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16837 |
|
| dc.description.abstract |
In this work, we have investigated the impacts of taper
angle and channel doping on the performance parameters
of a vertical channel 3D NAND flash memory. It is found
that string current and threshold voltage (VT) distribution
of the word lines (WLs) along the string is influenced by
both, taper angle and channel doping. Therefore, nonuniformity
in VT distribution of different WLs due to
string tapering is minimized by optimizing the channel
doping along the string from top to bottom. Moreover, optimized
channel doping leads to an improved string current.
These results are crucial for the designing of high
performance and reliable future 3D NAND flash memories. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
ICSDM |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Flash memory |
en_US |
| dc.subject |
Threshold voltage |
en_US |
| dc.subject |
Technology computer-aided design (TCAD) |
en_US |
| dc.title |
Effect of String Tapering on Threshold Voltage Distribution and Its Mitigation in a Vertical Channel 3D NAND Flash Memory |
en_US |
| dc.type |
Article |
en_US |