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Semiconductor Properties of Crystalline Anthracene: Competition of Electron and Hole Photoinjection by Redox Electrolytes

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dc.contributor.author Rosseinsky, David R.
dc.contributor.author Hann, Richard A.
dc.contributor.author Axon, Anthony J.
dc.date.accessioned 2025-02-18T11:29:27Z
dc.date.available 2025-02-18T11:29:27Z
dc.date.issued 1974
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/17867
dc.description.abstract Electron photocurrents have been measured with a number of solution photoinjectors. A new set of electrode potentials for solid anthracene is used to account for the pH dependence of electron as compared with hole photocurrents and the absence of limiting values for the former, in terms of the reducibility and oxidisability of anthracene and the relative probabilities of charge reversion to the electrolyte injectors. The magnitudes of electron currents can in most cases be correlated with charge-transfer properties of the injectors or heavy atom spin-orbit effects on intersystem crossing. en_US
dc.language.iso en en_US
dc.publisher Journal of the Chemical Society : Faraday Transaction - I. The Chemical Society, London. 1974, 70 (11) en_US
dc.subject Chemistry en_US
dc.subject Semiconductor en_US
dc.subject Crystalline Anthracene en_US
dc.subject Journal of the Chemical Society : Faraday Transaction - I en_US
dc.title Semiconductor Properties of Crystalline Anthracene: Competition of Electron and Hole Photoinjection by Redox Electrolytes en_US
dc.type Article en_US


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