A new and exciting resistive gas sensor based on Ni/InGaN/GaN heterostructure, grown by plasma-assisted molecular beam epitaxy, has been developed to efficiently detect acetone very rapidly at low temperature. Non-rectifying ...
AlGaN/GaN heterojunction with Schottky metal contact can be modelled with two back-to-back diodes. The forward-biased diode between metal and AlGaN barrier acts at the onset of current with positive bias. Fowler– Nordheim ...
Achieving epitaxial growth of III-As on r-plane sapphire would potentially allow the integration of both laser and amplifier with corresponding RF electronics. Here we report on the growth of high-quality GaAs on an r-plane ...
High-quality cubic GaAs (111)A buffer layers have been grown on an atomically flat c-plane trigonal sapphire substrate having well-defined steps and terraces. A two-step growth method has been used where, at an early stage, ...
This paper presents an approach of compositional grading of the barrier in AlGaN/GaN quantum well heterostructure to achieve high two dimensional electron gas (2DEG) carrier concentration and mobility for RF power amplifier ...
High quality pseudomorphic Al 0.15 Ga 0.85 As/GaAs heterostructure was grown on an semi-insulating GaAs(100) substrate by Molecular Beam Epitaxy(MBE). Analysis of this structure was done by Photoluminescence (PL), HALL and ...
We propose and examine theoretically a new type of photodetector that senses THz single photons by the wavefunction change of a single electron confined in a quantum dot. A possible readout scheme is also presented.
The authors present the use of epitaxial AlN as the dielectric in a chip level thin film capacitor for operation at high temperatures and high frequencies. They have performed capacitance measurements up to 600 K. The basic ...
The work presents a comparative study on the effects of In incorporation in the channel layer of AlGaN/GaN type-II heterostructures grown on c-plane sapphire by Plasma Assisted Molecular Beam Epitaxy. The structural ...
Highly sensitive acetone sensing performance of Pd/AlGaN/GaN resistive devices in the temperature range of 100 °C-250 °C and in the detection range of 100-1000 ppm was reported. A plasma-assisted molecular beam epitaxy was ...
The effect of different quantum structures in the intrinsic region of a pin junction solar cell (SC) on the optical and electrical properties have been investigated. SCs with different quantum structures, such as, ...
A nondestructive approach is described that is applicable for studying the In-segregation phenomena in ultra-thin In(Ga)As/GaAs nanostructures grown by molecular beam epitaxy. The proposed method utilizes only the experimental ...
There exist discrepancies between reports on cross-hatch (CH) behaviour and its interaction with interfacial misfit dislocations in the literature. In this work, a thorough CH analysis has been presented by use of conventional ...
Let R be a commutative ring with unity. The notion of maximal non valuation
domain in an integral domain is introduced and characterized. A proper subring R of an
integral domain S is called a maximal non valuation domain ...
The notion of maximal non valuative domain is introduced and characterized.
An integral domain R is called a maximal non valuative domain
if R is not a valuative domain but every proper overring of R is
a valuative ...
Let R be a commutative ring with unity. The notion of maximal non -subrings
is introduced and studied. A ring R is called a maximal non -subring of a ring T if R T
is not a -extension, and for any ring S such that ...
Let R be a commutative ring with unity. The notion of maximal non chained subrings of a ring and maximal non ϕ-chained subrings of a ring is introduced which generalizes the concept of maximal non valuation subrings of a ...
Let R be a commutative ring with unity. Let H denotes the set of all rings R such that Nil(R) is a divided prime ideal. The notion of maximal non-Prüfer ring and maximal non-ϕ-Prüfer ring is introduced which generalize the ...
The notion of maximal non-ϕ-pseudo-valuation ring is introduced which generalizes the concept of maximal non-pseudo-valuation domain. The equivalence of maximal non-ϕ-PVR and maximal non-local ring is established under ...
We present progress on incorporation of nanopillar arrays into spin-polarized gallium arsenide photocathodes in pursuit of record high tolerance to ion back-bombardment. Our goal is to exceed the 400 Coulomb record for a ...