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Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness

Rao, V. Ramgopal (IEEE, 2015-10)
Physical Insights Into the Two-Stage Breakdown Characteristics of STI-Type Drain-Extended pMOS Device

Rao, V. Ramgopal (IEEE, 2015-12)
A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device

Rao, V. Ramgopal (IEEE, 2010-12)
Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS Devices

Rao, V. Ramgopal (IEEE, 2010-02)
On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions

Rao, V. Ramgopal (IEEE, 2010-05)
On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD condition

Rao, V. Ramgopal (IEEE, 2010-05)

Now showing items 1-6 of 6