dc.contributor.author |
Nakamura, Y. |
|
dc.contributor.author |
Matsumura, K. |
|
dc.contributor.author |
Shimoji, M. |
|
dc.date.accessioned |
2025-06-23T11:07:55Z |
|
dc.date.available |
2025-06-23T11:07:55Z |
|
dc.date.issued |
1974 |
|
dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/18970 |
|
dc.description.abstract |
The electrical conductivity and thermoelectric power of T12S have been measured as a'function of
temperature. Non-stoichiometric and impurity doping effects have been investigated. The results
for molten T12S containing excess metal atoms are discussed with relation to Mott’s theory for the
strong scattering process. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Journal of the Chemical Society : Faraday Transaction - I. The Chemical Society, London. 1974, 70 (1-6) |
en_US |
dc.subject |
Chemistry |
en_US |
dc.subject |
Electrical Properties |
en_US |
dc.subject |
Molten T12S |
en_US |
dc.subject |
Journal of the Chemical Society : Faraday Transaction - I |
en_US |
dc.title |
Electrical Properties of Molten T12S |
en_US |
dc.type |
Article |
en_US |