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Temperature & field dependence of ionization rates and drift velocity of electrons in silicon
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| dc.contributor.author | Ahmad, S. | |
| dc.date.accessioned | 2021-09-02T11:25:39Z | |
| dc.date.available | 2021-09-02T11:25:39Z | |
| dc.date.issued | 1969-11 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/1901 | |
| dc.description | Supervisor: Dr. W.S. Khokle | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | BITS Pilani | en_US |
| dc.subject | Physics | en_US |
| dc.subject | Ionization | en_US |
| dc.subject | Electrons | en_US |
| dc.subject | Silicon | en_US |
| dc.subject | Dielectric | en_US |
| dc.title | Temperature & field dependence of ionization rates and drift velocity of electrons in silicon | en_US |
| dc.type | Thesis | en_US |
