Browsing Department of Chemical Engineering by Subject "Deposition rate"

Now showing items 1-1 of 1

Monitoring of crystallization and the effect of the deposition rate, hydrogen content and annealing process on the crystallization of hot wire chemical vapor deposited hydrogenated amorphous silicon (a-Si:H) films

Roy, Banasri (Elsiever, 2008-07-31)

The crystallization behavior of the a-Si:H films grown by hot wire chemical vapor deposition has been studied using X-ray diffraction (XRD) and reflectance spectroscopy. The surface morphology of the films does not change ...

Now showing items 1-1 of 1

Search DSpace