DSpace Home
→
BITS Faculty Publications
→
Department of Electrical and Electronics Engineering
→
Browsing Department of Electrical and Electronics Engineering by Issue Date

Browsing Department of Electrical and Electronics Engineering by Issue Date

Now showing items 1-20 of 1605

Performance of Hybrid THz and Multiantenna RF System With Diversity Combining

Zafaruddin, S.M. (IEEE, 202-11)

Recent studies investigate single-antenna radio frequency (RF) systems mixed with terahertz (THz) wireless communications. This article considers a two-tier system of THz for backhaul and multiple-antenna-assisted RF for ...
Modal Characteristics of a doubly clad step- index optical fiber- general analytical approach

Chaubey, V.K. (Canadian Science Publishing, 1988)

Using a fairly rigorous approach, a general characteristic equation for a doubly clad step-index fibre has been derived under the assumption that the refractive-index difference between the inner and outer cladding is ...
Modal attenuation in a four-layer metal-clad planar waveguide with a semi-parabolically graded guiding layer — an analytical study

Chaubey, V.K. (Elsevier, 1991-04)

A general characteristic equation is derived for a four-layer metal-clad graded-index slab waveguide with a guiding layer having a semi-parabolic refractive index profile. The attenuation parameter for the lowest-order TE ...
Radiation Induced Interface State Generation in Nitrided and Reoxidized Nitrided Gate Oxides

Rao, V. Ramgopal (AIP, 1992-01)

Reoxidized nitrided oxide is compared with nitrided oxides and dry SiO2 for radiation‐induced interface‐state generation (ΔDitm) and midgap voltage shifts (ΔVmg). The suppression of ΔDitm observed with heavy nitridation ...
Radiation‐induced interface‐state generation in reoxidized nitrided SiO2

Rao, V. Ramgopal (AIP, 1992-01)

Reoxidized nitrided oxide is compared with nitrided oxides and dry SiO2 for radiation‐induced interface‐state generation (ΔDitm) and midgap voltage shifts (ΔVmg). The suppression of ΔDitm observed with heavy nitridation ...
Field Intensity and Power Confinement of Four-layer Slab Waveguides with Various Refractive Index Profiles in the Guiding Region

Chaubey, V.K. (De Gruyter, 1994)

Relative field intensity distributions in three differenttypes of structures, i.e. Step index Slab Waveguide(SSW), Semi-parabolic index Slab Waveguide (SPSW)and Parabolic index Slab Waveguide ...
Hysteresis behavior in 85-nm channel length vertical n-MOSFETs grown by MBE

Rao, V. Ramgopal (IEEE, 1996-06)

Vertical n-MOSFETs with channel lengths of 85 nm have been grown by MBE. For drain-to-source voltages V/sub DS/>3.3 V, these transistors exhibit hysteresis behavior similar to the reported behavior of fully depleted ...
Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics

Rao, V. Ramgopal (IEEE, 1996-09)

In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional ...
Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics

Rao, V. Ramgopal (Elsevier, 1997-03)

In this study we compared the charge trapping characteristics of low pressure chemical vapour deposited (LPCVD) oxide and remote plasma enhanced chemical vapour deposited (RPECVD) oxide with two types of thermally grown ...
High-field stressing of LPCVD gate oxides

Rao, V. Ramgopal (IEEE, 1997-03)

We have investigated gate oxide degradation as a function of high-field constant current stress for two types of oxides, viz. standard dry and LPCVD oxides. Charge injection was done from both electrodes, the gate and the ...
The Planar-Doped-Barrier FET:MOSFET Overcomes Conventional Limitations

Rao, V. Ramgopal (IEEE, 1997-10)

Introducing a concept of Electric-Field-Tailoring in vertical grown MOSFETs significant improvements concerning supply voltage, current and speed are possible. Based on vertical Silicon MOSFETs with sub-100nm channel ...
Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs

Rao, V. Ramgopal (IEEE, 1997-12)

In this paper we present experimental and simulation results on planar-doped-barrier MOSFETs (PDBFETs) and show the advantages that arise from the channel delta doping. Early and higher magnitude of velocity overshoot, ...
On-line instantaneous and delayed control of a fast tubular reactor

Bhanot, Surekha (IEEE, 1998)

A control system for the tubular reactor-unit has been synthesized, which is a combination of feedforward, feedback and inferential control configurations. The reactor chosen is fast; transient period for a given disturbance ...
Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs

Rao, V. Ramgopal (IEEE, 1998)

The effect of plasma damage on the MOSFET's flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 kHz which is a characteristic of the plasma damage. The ...
Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices

Rao, V. Ramgopal (IEEE, 1998-05)

In this paper, we describe the application of gate-induced-drain-leakage (GIDL) current for the characterization of gate edge damage which occurs during the plasma etch processes. We show from experimental and simulation ...
Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs

Rao, V. Ramgopal (Elsevier, 1998-05)

We introduce the concept of electric-field-tailoring in MBE-grown vertical metal-oxide semiconductor field-effect transistors (MOSFETs) and show that significant improvements in terms of supply voltage, current and speed ...
A Study of the Effect of Plasma Etch Damage on Sub-Micron MOSFET's Flicker Noise Properties

Rao, V. Ramgopal (IEEE, 1998-09)
Sub-0.18 /spl mu/m SOI MOSFETs using lateral asymmetric channel profile and Ge pre-amorphization salicide technology

Rao, V. Ramgopal (IEEE, 1998-10)

SOI devices are of great interest, especially for low power and low voltage applications. To achieve this goal, the device threshold voltage must be lowered while maintaining low sub-threshold leakage. However, when devices ...
Application of charge pumping technique for sub-micron MOSFET characterization

Rao, V. Ramgopal (Elsevier, 1998-11)

In this paper, charge pumping technique for MOSFET interface characterization will be reviewed. The basic principles of charge pumping technique will be elaborated and its evolution as an excellent tool for a thorough ...
Flicker Noise in GaN/Al Ga N Doped Channel Heterostructure Field Effect Transistors

Rao, V. Ramgopal (IEEE, 1998-12)

We have investigated noise characteristics of novel GaN/Al0:15Ga0:85N doped channel heterostructure field effect transistors designed for high-power density applications. The measurements were carried out for various ...

Now showing items 1-20 of 1605

Search DSpace

Advanced Search

Browse

All of DSpace
This Collection
- By Issue Date
- Authors
- Titles
- Subjects

Browsing Department of Electrical and Electronics Engineering by Issue Date

Browsing Department of Electrical and Electronics Engineering by Issue Date

Search DSpace

Browse

All of DSpace

This Collection

My Account