Browsing Department of Electrical and Electronics Engineering by Subject "1/f noise"

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1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks Publisher: IEEE PDF

Rao, V. Ramgopal (IEEE, 2009-06)

In this paper, we investigate the quality of MOSFET gate stacks where high- k materials are implemented as gate dielectrics. We evaluate both drain- and gate-current noises in order to obtain information about the defect ...
Border-Trap Characterization in High-κ Strained-Si MOSFETs

Rao, V. Ramgopal (IEEE, 2007-08)

In this letter, we focus on the border-trap characterization of TaN/HfO 2 /Si and TaN/HfO 2 /strained-Si/Si 0.8 Ge 0.2 n-channel MOSFET devices. The equivalent oxide thickness for the gate dielectrics is 2 nm. Drain-current ...

Now showing items 1-2 of 2

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