DSpace Home
→
BITS Faculty Publications
→
Department of Electrical and Electronics Engineering
→
Recent submissions

Department of Electrical and Electronics Engineering: Recent submissions

Now showing items 101-120 of 1605

Patterned Microfluidic Channels Using Self-assembled Hydroxy-Phenyl Porphyrin Monolayer

Rao, V. Ramgopal (IEEE, 2007)

In order to achieve patterned surfaces for microfluidic applications, we show for the first time the use of self-assembled monolayer (SAM) of Hydroxy-phenyl porphyrin on SiO 2 surface following a chemical procedure. The ...
Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2

Rao, V. Ramgopal (IEEE, 2007)

In this paper we present for the first time a single-equation inversion-charge-based drain current model for SDGFETs based on the drift-diffusion transport mechanism using an exponent n=2 for velocity saturation, that is ...
Closed Form Current and Conductance Model for Symmetric Double-Gate MOSFETs using Field-dependent Mobility and Body Doping

Rao, V. Ramgopal (TechConnect, 2008-06)

In this paper we present a completely closed-form inversion charge-based model for the drain current and conductance of a symmetric double-gate MOSFET based on the drift-diffusion transport mechanism, that takes into account ...
Photoplastic NEMS with an Encapsulated Polysilicon Piezoresistor

Rao, V. Ramgopal (IEEE, 2008)

We demonstrate a photoplastic NEMS device that has an encapsulated polysilicon piezoresistor. The crucial temperature limitation of depositing a polysilicon film on a polymer was overcome by employing a novel Hotwire CVD ...
Metallated Porphyrin Self Assembled Monolayers as Cu Diffusion Barriers for the Nano-Scale CMOS Technologies

Rao, V. Ramgopal (IEEE, 2008)

In this paper we have studied the application of metallated porphyrin self assembled monolayers (SAMs) as Cu diffusion barriers for ultra-large scale integration (ULSI) CMOS applications. The results for Cu/SiO 2 /Si and ...
The Electrochemical Society, find out more Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects

Rao, V. Ramgopal (IOP, 2009)

Clarification of robustness for threshold voltage (Δth) variation in FinFETs is very important. Vth variation (ΔVth) caused by fluctuations of some principal device parameters are evaluated, compared to the planar MOSFETs. ...
Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?

Rao, V. Ramgopal (IEEE, 2008)

Sub-20 nm gate length FinFETs, are constrained by the very thin fin thickness (T FIN ) necessary to maintain acceptable short-channel performance. For the 45 nm technology node and below, a novel device design methodology ...
Automated design and optimization of circuits in emerging technologies

Rao, V. Ramgopal (IEEE, 2009)

A novel table-based environment for automatic design and optimization of FinFET circuits is demonstrated. A new accurate look-up table (LUT) technique is implemented in a circuit simulator and integrated with particle swarm ...
DC & transient circuit simulation methodologies for organic electronics

Rao, V. Ramgopal (IEEE, 2009)

This work establishes a novel circuit simulation methodology for organic thin film transistors (OTFTs). Because of a lack of well developed physical models for OTFTs and due to the limitations of conventional parameter ...
Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique

Rao, V. Ramgopal (IEEE, 2009-06)

The interface trap density of fresh TiN/TaN gated HfO 2 /SiO 2 /Si/epi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. ...
Hydroxy-phenyl Zn(II) porphyrin self-assembled monolayer as a diffusion barrier for copper-low k interconnect technology

Rao, V. Ramgopal (IEEE, 2009)

In this paper, we have studied the application of metallated porphyrin self-assembled monolayer (SAM) as a copper diffusion barrier for low-k inter-metal dielectric (IMD) CMOS technologies. SAM formed on hydrogen silesquioxane ...
Highly robust nanoscale planar double-gate MOSFET device and SRAM cell immune to gate-misalignment and process variations

Rao, V. Ramgopal (IEEE, 2009)

Gate misalignment and process variations are important challenges in sub-20 nm gate length planar double-gate (DG) MOSFET devices. For the first time, we demonstrate a misalignment- and process variations-aware device ...
Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection

Rao, V. Ramgopal (IEEE, 2009)

A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments ...
Selective vapor-liquid-solid growth of needle arrays by hotwire chemical vapor deposition with low substrate temperature

Rao, V. Ramgopal (IEEE, 2009)

We present the technology for low substrate temperature (∼400°C) growth of high-density, defect-free (without kinks and branches), unidirectional arrays of Si needles with positive profiles and sub-μm tips using selective ...
An ultra-sensitive ∆R/R measurement system for biochemical sensors using piezoresistive micro-cantilevers

Rao, V. Ramgopal (IEEE, 2009)

Piezoresistive micro-cantilevers are interesting bio-sensing tool whose base resistance value (R) changes by a few parts per million (DeltaR) in deflected conditions. Measuring such a small deviation is always being a ...
Photoplastic Microcantilever Sensor Platform for Explosive Vapor Detection

Rao, V. Ramgopal (World Scientific, 2011)

We present an ultrasensitive and cost effective polymeric microcantilever sensor platform for explosive vapor detection. These sensors were fabricated using SU-8 polymer composite materials with two transduction approaches ...
Organic sensors for explosive detection

Rao, V. Ramgopal (IEEE, 2009)

Organic field effect transistors and polymer microcantilevers are two different classes of organic sensors with potential applications in biochemical sensing. Organic field effect transistors based on poly (3-hexylthiophene) ...
Fabrication and characterization of novel polymer composite microcantilever sensors for explosive detection

Rao, V. Ramgopal (IEEE, 2010-01)

In this paper, we report the development of a SU-8 based novel polymer composite microcantilever sensor designed for surface stress measurements. Nanoindentation study was carried out for measuring the Young's modulus of ...
Filament study of STI type drain extended NMOS device using transient interferometric mapping

Rao, V. Ramgopal (IEEE, 2009-12)

We present filament behavior of STI type DeNMOS devices using detailed Transient Interferometric Mapping experiments and 3D TCAD simulations. Device behavior at different TLP currents is discussed. The impact of localized ...
Benchmarking the device performance at sub 22 nm node technologies using an SoC framework

Rao, V. Ramgopal (IEEE, 2009)

For the first time this paper makes an attempt at predicting the System-on-Chip (SoC) performance (i.e. logic, SRAM, ESD and I/O) of various sub 20 nm channel length planar and non-planar SOI devices using extensive & well ...

Now showing items 101-120 of 1605

Search DSpace

Advanced Search

Browse

All of DSpace
This Collection
- By Issue Date
- Authors
- Titles
- Subjects

Recently added

Department of Electrical and Electronics Engineering: Recent submissions

Search DSpace

Browse

All of DSpace

This Collection

My Account