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Department of Electrical and Electronics Engineering: Recent submissions

Now showing items 121-140 of 1605

Auto-BET-AMS: An automated device and circuit optimization platform to benchmark emerging technologies for performance and variability using an analog and mixed-signal design framework

Rao, V. Ramgopal (IEEE, 2010)

In this paper, we present Auto-BET-AMS, an automated device, circuit and system-level simulation platform suitable for benchmarking emerging technologies at the end of the CMOS roadmap. This platform is suitable for ...
On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD condition

Rao, V. Ramgopal (IEEE, 2010-05)

We present differences in the ESD failure mechanisms, intrinsic behavior and various phases of filamentation of STI type DeNMOS and DePMOS devices using detailed 3D TCAD simulations, TLP and TIM experiments. The impact of ...
On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions

Rao, V. Ramgopal (IEEE, 2010-05)

We present 3D device modeling of RESURF or non-STI type DeNMOS device under ESD conditions. The impact of base push-out, pulse-to-pulse instability and electrical imbalance on the various phases of filamentation is discussed. ...
An Ultra Sensitive Polymer Composite Microcantilever Platform for Explosive Detection

Rao, V. Ramgopal (Elsevier, 2014-03)

In the present paper, we demonstrate a compact, nonoptical, and inexpensive polymer nano-composite microcantilever sensor platform for the detection of 2,4,6-trinitrotoluene (TNT), hexahydro-1,3,5-triazine (RDX) and ...
Ionizing Radiation Total Dose Detectors Using Oligomer Organic Semiconductor Material and Devices

Rao, V. Ramgopal (Springer, 2011-03)

Organic semiconducting oligomer – Pentacene, as a material and organic electronic devices based on it, are proposed here as total dose detectors for ionizing radiation. Pentacene, when exposed to ionizing radiation of γ – ...
High Yield Polymer MEMS Process for CMOS/MEMS Integration

Rao, V. Ramgopal (Springer, 2011-02)

MEMS community is increasingly using SU-8 as a structural material because it is self-patternable, compliant and needs a low thermal budget. While the exposed layers act as the structural layers, the unexposed SU-8 layers ...
An Ultra-Sensitive Polymer Composite Lab-on-Chip Platform for Disposable Cardiac Diagnostic Applications

Rao, V. Ramgopal (2010)
On the Transient behavior of various drain extended MOS devices under the ESD stress condition

Rao, V. Ramgopal (IEEE, 2010)

This paper presents ESD evaluation of various nanoscale drain extended MOS devices. Current and time evolution of current filaments formed under the ESD stress conditions are investigated. A complete picture of device's ...
3D TCAD based approach for the evaluation of nanoscale devices during ESD failure

Rao, V. Ramgopal (IEEE, 2010-11)

This paper demonstrates a 3D TCAD based approach towards the evaluation and pre-silicon development of nanoscale devices for advanced ESD protection concepts. Impact of various physical models and parameters on the accuracy ...
A 8-resistor SU-8 accelerometer with reduced cross axis sensitivity

Rao, V. Ramgopal (IEEE, 2010)

The MEMS accelerometer has a high cross sensitivity due to proof mass being eccentric. This paper gives results for a SU-8 z-axis accelerometer that uses 8-resistor Wheatstone-bridge to reduce the x-axis and y-axis cross ...
Optimum design of SU-8 based accelerometer with reduced cross axis sensitivity

Rao, V. Ramgopal (IEEE, 2010-06)

The work presented here shows a new design for SU8 based piezoresistive accelerometer, where SU8/carbon black is used as piezoresistors. The accelerometer structure is optimized to generate maximum bending stress at the ...
On the thermal failure in nanoscale devices: Insight towards heat transport including critical BEOL and design guidelines for robust thermal management & EOS/ESD reliability

Rao, V. Ramgopal (IEEE, 2011)

For the first time we have reported thermal failure of FinFET devices related to fin thickness mismatch, under the normal operating condition. Pre and post failure characteristics are investigated. Furthermore, a detailed ...
Bottom-up method for work function tuning in high-k/metal gate stacks in advanced CMOS technologies

Rao, V. Ramgopal (IEEE, 2011-08)

In this paper we have studied the application of porphyrin self-assembled monolayers (SAMs) for metal-gate work function tuning in high-k/metal gate technologies. Varying the dipole moment in porphyrin macrocycles by ...
MRS Online Proceedings Library (OPL) Article contents Abstract References OFET Sensors with Poly 3-hexylthiophene and Pentacene as Channel Materials for Ionizing Radiation

Rao, V. Ramgopal (Cambridge University Press, 2012-02)

Pentacene and poly 3-hexylthiophene (P3HT) are the most promising p-type organic semiconducting materials for fabrication of organic field effect transistors (OFETs). OFETs with aforesaid organic semiconducting materials ...
Copper (II) Phthalocyanine Based Field Effect Transistors as Total Dose Sensors for Determining Ionizing Radiation Dose

Rao, V. Ramgopal (Springer, 2011-09)

Changes in the material properties of copper (II) phthalocyanine (CuPc) thin-films were studied upon exposure to increasing dose of ionizing radiation using photoluminescence spectrum. We observe generation of new energy ...
A low-cost, ultra sensitive hand-held system for explosive detection using piezo-resistive micro-cantilevers

Rao, V. Ramgopal (IEEE, 2011)

This paper presents a hand-held explosive detector system based on piezo-resistive cantilever sensors. A novel signal conditioning scheme comprising current excitation method with modified half bridge configuration, is ...
Piezoresistive 6-MNA coated microcantilevers with signal conditioning circuits for electronic nose

Rao, V. Ramgopal (IEEE, 2012-01)

This paper presents a micro cantilever based piezo-resistive sensor and its fabrication process along with two different techniques for signal conditioning of sensor output aimed for artificial nose applications. The ...
Circuit Optimization at 22nm Technology Node

Rao, V. Ramgopal (IEEE, 2012)

With every new technology node, scaling down of Device-to-Interconnect Capacitance ratio causes Interconnect delay to become bottleneck for circuit performance. To miti-gate this effect, interconnect routing area on-chip ...
ZnO Nanorod Based Ultra Sensitive and Selective Explosive Sensor

Rao, V. Ramgopal (IEEE, 2013-02)

A small scale (20 μm), ultra sensitive (50 ppb) and highly selective sensor based on ZnO nanostructures using Micro-electro-mechanical system (MEMS) platform has been reported here for the detection of explosive and Volatile ...
Organic Nano-Electro-Mechanical-Sensor Systems for healthcare and Environmental Applications

Rao, V. Ramgopal (IEEE, 2012)

Organic field effect transistors and polymer microcantilevers are two classes of organic sensors with potential applications in biochemical sensing. The organic field effect transistors (OFETs) with region regular ...

Now showing items 121-140 of 1605

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