As the CMOS technology enters into the sub 10 nm node, in order to reap the benefits of scaling, different techniques, materials and processes are required Various issues of reliability, variability and power issues are a ...

A controllable and selective process for doping is essential for current CMOS technology, and with the advent of FinFETs, necessity for conformal doping has become inevitable. In this work, we demonstrate formation of novel ...

In this work, we have grown GaN nanowires using Plasma assisted Molecular beam epitaxy (PA-MBE) on Si (111) substrate. High resolution X-ray diffraction (HRXRD) characterization and scanning electron microscopy (SEM) studies ...

This paper presents a brief overview of an Organic field effect transistor (OFET) based sensor applications. It highlights recent progress in the field of gas sensing and ionizing radiation sensing using OFETs. Besides ...

In this work, we report the application of graphene field effect transistors (GFETs) as a gamma radiation sensor. The GFETs were irradiated at room temperature by 60 Co gamma radiation source for 10 kGy and 20 kGy gamma ...

Graphene, possess exceptional electrical and optical properties due to its unique sp2 hybridized hexagonal structure and linear energy-momentum relationship near Dirac point. Very high room temperature mobility and highest ...

We report here for the first time, a simple novel scaling approach is proposed to achieve low pull-in voltage (V pi ), delay (t delay ), energy (U) and mechanical stress (σ) in the NEMS analogous to MOSFETs dimensional ...

In this paper, we show that NEMS plays a key role to reduce the leakage current for designing the sub-threshold neuromorphic circuits in 65 nm CMOS technology. For the first time, we propose a novel energy efficient hybrid ...

Two-dimensional material-based bolometer sensors have unique optoelectronic properties. Here, a transparent and flexible bolometer and photodetector, based on MoS 2 is presented which measures radiation intensity via ...

In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional ...