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Department of Electrical and Electronics Engineering: Recent submissions

Now showing items 261-280 of 1651

Reliability of ultrathin JVD silicon nitride MNSFETs under high field stressing

Rao, V. Ramgopal (IEEE, 2003-08)

In this paper, we study the reliability of n-channel Metal-Nitride-Silicon FETs fabricated using ultrathin Jet Vapor Deposited (JVD) Silicon Nitride gate dielectric under constant voltage stressing. Due to the stress, ...
Silicon film thickness optimization for SOI-DTMOS from circuit performance considerations

Rao, V. Ramgopal (IEEE, 2004-06)

The performance of partially depleted silicon-on-insulator (PDSOI) dynamic threshold MOSFET (DTMOS) devices is degraded by the body capacitance and body resistance, which depend strongly on the silicon film thickness. We ...
The effect of LAC doping on deep submicrometer transistor capacitances and its influence on device RF performance

Rao, V. Ramgopal (IEEE, 2004-09)

In this paper, we have systematically investigated the effect of lateral asymmetric doping on the MOS transistor capacitances and compared their values with conventional (CON) MOSFETs. Our results show that, in lateral ...
Deep sub-micron device and analog circuit parameter sensitivity to process variations with halo doping and its effect on circult linearity

Rao, V. Ramgopal (Institute of Pure and Applied Physics, 2005)

Single halo (SH) and double halo (DH) metal oxide semiconductor field effect transistors (MOSFETs) have been reported to exhibit excellent short channel performance in the sub 100 nm regime. In this work, the effect of ...
Optimum Body Bias Constraints for Leakage Reduction in High-k Complementary Metal–Oxide–Semiconductor Circuits

Rao, V. Ramgopal (IOP, 2009)

A significantly increased subthreshold leakage is observed in devices with high-k gate dielectric due to gate fringing field effects. Further, the drain to body band-to-band tunnelling leakage (BTBT) current also increases ...
Superior hot carrier reliability of single halo (SH) silicon-on-insulator (SOI) nMOSFET in analog applications

Rao, V. Ramgopal (IEEE, 2005-03)

In this paper, for the first time, we report a study on the hot carrier reliability performance of single halo (SH) thin film silicon-on-insulator (SOI) nMOSFETs for analog and mixed-signal applications. The SH structure ...
Semiconductor Science and Technology Design of a 0.1 µm single halo (SH) thin film silicon-on-insulator (SOI) MOSFET for analogue applications

Rao, V. Ramgopal (IOP, 2005-07)

In this paper, we propose a design of a 0.1 µm single halo (SH) thin film silicon-on-insulator (SOI) nMOSFET device for analogue and mixed signal applications. The single halo structure has a high pocket impurity concentration ...
Evaluation of the impact of layout on device and analog circuit performance with lateral asymmetric channel MOSFETs

Rao, V. Ramgopal (IEEE, 2005-07)

Lateral asymmetric channel (LAC) or single halo devices have been reported to exhibit excellent short channel behavior in the sub-100-nm regime. In this paper, we have quantified the performance degradation in LAC devices ...
Power-area evaluation of various double-gate RF mixer topologies

Rao, V. Ramgopal (IEEE, 2005-09)

We analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer applications from the point of optimizing the transconductance gain, power consumption, and area. Mixer topologies using the 0.13-μm conventional ...
A new oxide trap-assisted NBTI degradation model

Rao, V. Ramgopal (IEEE, 2005-09)

Using detailed experimental data, we demonstrate that for the correct interpretation of negative bias temperature instability (NBTI) degradation behavior with stress time, it is essential to include the effect of trapping ...
Preparation, Characterization, and Electrical Properties of a Self-Assembled meso-Pyridyl Porphyrin Monolayer on Gold Surfaces

Rao, V. Ramgopal (CSIRO, 2005-12)

A meso-pyridyl porphyrin, 5-(4-(2-(4-(S-acetylthiomethyl)phenyl)ethynyl)phenyl)-10,15,20-tris(4-pyridyl) porphyrin was synthesized by coupling of 5-{4-ethynyl}phenyl-10,15,20-tris(4-pyridyl) porphyrin with 4-(S-acetylthi ...
NBTI degradation and its impact for analog circuit reliability

Rao, V. Ramgopal (IEEE, 2005-12)

A methodology to quantify the degradation at circuit level due to negative bias temperature instability (NBTI) has been proposed in this work. Using this approach, a variety of analog/mixed-signal circuits are simulated, ...
Optimization of sub 100 nm Γ-gate Si-MOSFETs for RF applications

Rao, V. Ramgopal (2005-04)

This paper presents characterization and simulation studies on the RF performance of the Γ (Gamma) gate MOSFETs. The Γ-gate MOSFET offers the advantage of reduced gate resistance, a critical parameter in high frequency ...
Design and Fabrication Issues in Affinity Cantilevers for bioMEMS Applications

Rao, V. Ramgopal (IEEE, 2006-12)

Microfabricated cantilevers are widely used for biomedical sensing applications. In this paper, for the first time, design guidelines have been provided for composite polymeric microcantilevers with embedded piezoresistors. ...
Impact of Halo Doping on the Subthreshold Performance of Deep-Submicrometer CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications

Rao, V. Ramgopal (IEEE, 2007-02)

In addition to its attractiveness for ultralow power applications, analog CMOS circuits based on the subthreshold operation of the devices are known to have significantly higher gain as compared to their superthreshold ...
Silanization and Antibody Immobilization on SU-8

Rao, V. Ramgopal (Elsevier, 2007-01)

SU-8, an epoxy based negative photoresist, has emerged as a structural material for microfabricated sensors due to its attractive mechanical properties like low Young's modulus and chemical properties like inertness to ...
Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer

Rao, V. Ramgopal (AIP, 2007-03)

Pentacene films grown on sol-gel silica dielectrics showed a significant enhancement in field effect mobility, threshold voltages, and subthreshold swings. This letter investigates the contributing factors for the enhanced ...
A novel dry method for surface modification of SU-8 for immobilization of biomolecules in Bio-MEMS

Rao, V. Ramgopal (Elsevier, 2007-05)

SU-8 has been primarily used for structural elements and microfludics components in MEMS. Microsystems for biological applications require immobilization of biomolecules on the MEMS structures. In order to functionalize ...
Affinity cantilever sensors for cardiac diagnostics

Rao, V. Ramgopal (NISCAIR, 2007-04)

Cardiac problems are on the rise in the Indian sub-continent due to the changing life styles and food habits. Acute Myocardial Infraction (AMI) is becoming a major concern. In this paper, we report the development of ...
Impact of High-k Gate Dielectrics on the Device and Circuit Performance of Nanoscale FinFETs

Rao, V. Ramgopal (IEEE, 2007-04)

The impact of high-k gate dielectrics on device short-channel and circuit performance of fin field-effect transistors is studied over a wide range of dielectric permittivities k. It is observed that there is a decrease in ...

Now showing items 261-280 of 1651

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