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Department of Electrical and Electronics Engineering: Recent submissions

Now showing items 281-300 of 1651

Parasitic effects in multi-gate MOSFETs

Rao, V. Ramgopal (IEICE, 2007)

In this paper, we have systematically investigated parasitic effects due to the gate and source-drain engineering in multi-gate transistors. The potential impact of high-K dielectrics on multi-gate MOSFETs (MuGFETs), such ...
Border-Trap Characterization in High-κ Strained-Si MOSFETs

Rao, V. Ramgopal (IEEE, 2007-08)

In this letter, we focus on the border-trap characterization of TaN/HfO 2 /Si and TaN/HfO 2 /strained-Si/Si 0.8 Ge 0.2 n-channel MOSFET devices. The equivalent oxide thickness for the gate dielectrics is 2 nm. Drain-current ...
Solution-Processed n-Type Organic Field-Effect Transistors With High on /off Current Ratios Based on Fullerene Derivatives

Rao, V. Ramgopal (IEEE, 2007-10)

Solution-processed n-type organic field-effect transistors (OFETs) based on the fullerene derivative {6}-1-(3-(2-thienylethoxycarbonyl)-propyl)-{5}-1-phenyl-[5,6]-C61 (TEPP) and phenyl-C61-butyric acid methyl ester (PCBM) ...
Polymerization on DNA Templates for Nanoelectronics Applications

Rao, V. Ramgopal (American Scientific Publishers, 2007)

Polyaniline nanowires were grown using DNA as a template for possible use as interconnects in molecular electronics applications. Polymerization of aniline on salmon sperm DNA templates was achieved in phosphate buffers ...
Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors

Rao, V. Ramgopal (IEEE, 2007-12)

The electret induced hysteresis was studied in sol-gel silica films that result in higher drain currents and improved device performance in pentacene field-effect transistors. Vacuum and ambient condition studies of the ...
Gate Fringe-Induced Barrier Lowering in Underlap FinFET Structures and Its Optimization

Rao, V. Ramgopal (IEEE, 2008-01)

The difficulty to fabricate and control precisely defined doping profiles in the source/drain underlap regions of FinFETs necessitates the use of undoped gate underlap regions as the technology scales down. We present a ...
Device Design and Optimization Considerations for Bulk FinFETs

Rao, V. Ramgopal (IEEE, 2008-02)

Fabrication of FinFETs using bulk CMOS instead of silicon on insulator (SOI) technology is of utmost interest as it reduces the process costs. Using well-calibrated device models and 3-D mixed mode simulations, we show ...
DNA Based Nanoelectronics

Rao, V. Ramgopal (Bentham Science, 2008)

As complementary metal-oxide-semiconductor (CMOS) process technologies scale below the sub 50-nm feature sizes, the conventional top-down approaches need to be modified to cope with the increased process variations, ...
Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

Rao, V. Ramgopal (Elsevier, 2008-01)

This paper reports the use of hot-wire chemical vapour deposited (HWCVD) Silicon nitride as a passivation layer for Organic Field Effect Transistors (OFETs). Firstly, the degradation study of the OFETs is done with time. ...
A Novel and Robust Approach for Common Mode Feedback Using IDDG FinFET

Rao, V. Ramgopal (IEEE, 2008-11)

In this paper, we propose a novel and robust approach for common mode feedback (CMFB) for a differential amplifier using independently driven double gate (IDDG) FinFET technology. The performance of a differential amplifier ...
On the dc and noise properties of the gate current in epitaxial Ge p -channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack

Rao, V. Ramgopal (AIP, 2008-04)

In this paper, we report the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide field effect transistors (pMOSFETs) with a Si passivated surface. The gate stack consists of HfO2∕SiO2 dielectric ...
Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

Rao, V. Ramgopal (IEEE, 2008-08)

A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with velocity saturation effects being included ...
Fabrication and Characterization of a Polymeric Microcantilever With an Encapsulated Hotwire CVD Polysilicon Piezoresistor

Rao, V. Ramgopal (IEEE, 2009-02)

We demonstrate a novel photoplastic nanoelectromechanical device that includes an encapsulated polysilicon piezoresistor. The temperature limitation that typically prevents deposition of polysilicon films on polymers was ...
An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs

Rao, V. Ramgopal (IEEE, 2009-03)

In developing the drain current model of a symmetric double-gate MOSFET, one encounters a transcendental equation relating the value of an intermediate variable beta to the gate and drain voltages. In this brief, we present ...
A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs

Rao, V. Ramgopal (Elsevier, 2009-02)

In developing the drain current model of a symmetrically driven, undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET), one encounters a transcendental equation relating the value of an intermediate variable β ...
1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks Publisher: IEEE PDF

Rao, V. Ramgopal (IEEE, 2009-06)

In this paper, we investigate the quality of MOSFET gate stacks where high- k materials are implemented as gate dielectrics. We evaluate both drain- and gate-current noises in order to obtain information about the defect ...
Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors

Rao, V. Ramgopal (AIP, 2008-12)

Organic field effect transistors based on poly(3-hexylthiophene) and CuII tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitrobased explosive compounds, viz., 1,3,5-trinitro-1,3,5- ...
Bio-functionalization of silicon nitride-based piezo-resistive microcantilevers

Rao, V. Ramgopal (Springer, 2009-10)

Methods of bio-functionalize silicon nitride involve process steps to convert it into an oxynitride via plasma implantation techniques. Such methods can potentially damage microstructures such as cantilevers. In this paper, ...
Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

Rao, V. Ramgopal (IEEE, 2009-05)

In this paper, a comprehensive study of hot- carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. ...
Determining ionizing radiation using sensors based on organic semiconducting material

Rao, V. Ramgopal (AIP, 2009-03)

The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest ...

Now showing items 281-300 of 1651

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