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Department of Electrical and Electronics Engineering: Recent submissions

Now showing items 301-320 of 1651

A Novel Table-Based Approach for Design of FinFET Circuits

Rao, V. Ramgopal (IEEE, 2009-07)

A new lookup-table (LUT) approach, based on normalization of the drain current with an I D - V G template, is proposed for simulation of MOS transistor circuits. The LUT approach is validated by considering two examples ...
Chemical Vapor Deposition Precursors for High Dielectric Oxides: Zirconium and Hafnium Oxide

Rao, V. Ramgopal (Taylor & Francis, 2009)

High dielectric oxides namely ZrO2 and HfO2 have gained a lot of importance as they are candidates in the electronic industry in the form of CMOS technology. A complete review of the literature examples of the precursors ...
Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High- k Gate Dielectric Material

Rao, V. Ramgopal (IEEE, 2009-05)

In this letter, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) ...
Drain current model for nanoscale double-gate MOSFETs

Rao, V. Ramgopal (Elsevier, 2009-09)

A closed form inversion charge-based drain current model for a short channel symmetrically driven, lightly doped symmetric double-gate MOSFET (SDGFET) is presented. The model has physical origins, but has some fitting ...
Polymer microcantilever biochemical sensors with integrated polymer composites for electrical detection

Rao, V. Ramgopal (Elsevier, 2009-09)

Micro fabricated sensors based on nanomechanical motion with piezoresistive electrical readout have become a promising biochemical sensing tool. The conventional microcantilever materials are mostly silicon-based. The ...
Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects

Rao, V. Ramgopal (IOP, 2009)

Clarification of robustness for threshold voltage (Δth) variation in FinFETs is very important. Vth variation (ΔVth) caused by fluctuations of some principal device parameters are evaluated, compared to the planar MOSFETs. ...
Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS Devices

Rao, V. Ramgopal (IEEE, 2010-02)

In this paper, the optimization issues of various drain-extended devices are discussed for input/output applications. The mixed-signal performance, impact of process variations, and gate oxide reliability of these devices ...
Impact of Fringe Capacitance on the Performance of Nanoscale FinFETs

Rao, V. Ramgopal (IEEE, 2010-01)

In this letter, we report the enhanced fringe capacitance in FinFETs when compared to the equivalent planar MOSFETs at the 22-nm node. We show that this increase is due to the 3-D nature of the device and also due to the ...
Variable Interface Dipoles of Metallated Porphyrin Self-Assembled Monolayers for Metal-Gate Work Function Tuning in Advanced CMOS Technologies

Rao, V. Ramgopal (IEEE, 2010-02)

This paper presents a technique for continuous tuning of the metal-gate work function (¿ metal ) using self-assembled monolayer (SAM) of metallated porphyrins. Porphyrin SAM was prepared on SiO 2 followed by Al evaporation ...
Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs

Rao, V. Ramgopal (Elsevier, 2010-10)

In this paper, we report a study to understand the fin width dependence on performance, variability and reliability of n-type and p-type triple-gate fin field effect transistors (FinFETs) with high-k dielectric and metal ...
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

Rao, V. Ramgopal (Elsevier, 2010-03)

A systematic study of the dependence of short-channel effects (SCEs) on the channel thickness (Tch) of double-gate MOSFETs revealed that there is a particular range of Tch in which SCEs are significantly degraded compared ...
Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects

Rao, V. Ramgopal (IOP, 2020-04)

The variation in the threshold voltage caused by fluctuations in a device parameter is given by the product of a sensitivity coefficient and the fluctuation amount. In this paper, the sensitivity coefficient for each device ...
A Novel Bottom Spacer FinFET Structure for Improved Short-Channel, Power-Delay, and Thermal Performance

Rao, V. Ramgopal (IEEE, 2010-06)

For the first time, we propose a novel bottom spacer fin-shaped field-effect-transistor (FinFET) structure for logic applications suitable for system-on-chip (SoC) requirements. The proposed device achieved improved ...
Polymer composite-based OFET sensor with improved sensitivity towards nitro based explosive vapors

Rao, V. Ramgopal (Elsevier, 2010-06)

Sensors based on the organic field effect transistors (OFETs) have been used for detection of vapors of explosives, e.g. 1,3,5-trinitro-1,3,5-triazacyclohexane (RDX), 2,4,6-trinitrotoluene (TNT), and dinitrobenzene (DNB). ...
Performance enhancement of p-type organic thin film transistors using zinc oxide nanostructures

Rao, V. Ramgopal (World Scientific, 2011)

This paper reports the performance enhancement of nanocomposite thin film transistors fabricated using ZnO dispersed in p-type polymer, poly 3-hexylthiophene (P3HT). The ZnO nanostructures considered here are nanorods ...
Nanomechanical characterization of multiferroic thin films for micro-electromechanical systems

Rao, V. Ramgopal (World Scientific, 2011)

In this paper, the elastic properties of Dy modified BiFeO3 (BDFO) multiferroic films deposited on Si substrate are reported for the first time. The mechanical properties are extracted using nanoindentation technique. The ...
A new physical insight and 3D device modeling of STI type denmos device failure under ESD conditions

Rao, V. Ramgopal (IEEE, 2009)

We present experimental and simulation studies of STI type DeNMOS devices under ESD conditions. The impact of base-push-out, power dissipation because of space charge build-up and, regenerative NPN action, on the various ...
On the Behavior of STI-Type DeNMOS Device Under ESD Conditions

Rao, V. Ramgopal (IEEE, 2010-09)

We present experimental and simulation studies of shallow trench isolation (STI)-type drain-extended n-channel metal-oxide-semiconductor devices under human body model (HBM)-like electrostatic discharge (ESD) conditions. ...
Insights Into the Design and Optimization of Tunnel-FET Devices and Circuits

Rao, V. Ramgopal (IEEE, 2011-04)

Improving the on-current has been the focus of enhancing the performance of tunnel field-effect transistors (TFETs). In this paper, we show that the increase in I_ON is not sufficient to improve the circuit performance ...
Complementary Organic Circuits Using Evaporated F16CuPc and Inkjet Printing of PQT

Rao, V. Ramgopal (IEEE, 2010)

Organic complementary inverters and ring oscillators are fabricated using a unique combination of inkjet printing and evaporation of organic semiconductors. p-Type poly (3, 3'''-didodecylquaterthiophene) (PQT) is inkjet ...

Now showing items 301-320 of 1651

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