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Department of Electrical and Electronics Engineering: Recent submissions

Now showing items 381-400 of 1651

Insight into the charge transport and degradation mechanisms in organic transistors operating at elevated temperatures in air

Rao, V. Ramgopal (Elsevier, 2015-07)

Operational stability of organic devices at above-room-temperatures in ambient environment is of imminent practical importance. In this report, we have investigated the charge transport and degradation mechanisms in pentacene ...
Polymer-Based MEMS Photodetector With Spectral Response in UV-Vis-NIR and Mid-IR Region

Rao, V. Ramgopal (IEEE, 2015-08)

Integrating various components on the same chip is highly sought after for various optoelectronic applications. In an attempt to provide an on-chip photodetection, a MEMS-based photodetector device with a wide spectral ...
Anomalous Width Dependence of Gate Current in High- K Metal Gate nMOS Transistors

Rao, V. Ramgopal (IEEE, 2015-08)

This letter analyzes the width dependence of gate current observed in nMOS transistors fabricated using the 28-nm gate-first CMOS process. It is experimentally shown that the gate current density is ~10× lower for 80-nm ...
A Fully Integrated RF PA in 28nm CMOS with Device Design for Optimized Performance and ESD Robustness

Rao, V. Ramgopal (IEEE, 2015-09)

In this paper, we report drain-extended MOS device design guidelines for the RF power amplifier (RF PA) applications. A complete RF PA circuit in a 28-nm CMOS technology node with the matching and biasing network is used ...
Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness

Rao, V. Ramgopal (IEEE, 2015-10)

In this paper, we report drain-extended MOS device design guidelines for the RF power amplifier (RF PA) applications. A complete RF PA circuit in a 28-nm CMOS technology node with the matching and biasing network is used ...
High-Voltage MOS Device Design for Improved Static and RF Performance

Rao, V. Ramgopal (IEEE, 2015-10)

In this paper, for the first time, the key design parameters of a shallow trench isolation-based drain-extended MOS transistor are discussed for RF power applications in advanced CMOS technologies. The tradeoff between ...
Anomalous diffusion mediated kinetic modelling of surface-stress sensors

Rao, V. Ramgopal (Elsevier, 2016-01)

Diffusion kinetics over fractal geometries are governed by anomalous subdiffusion processes for non-energetically driven adsorption/desorption of analyte over the sensor surface. This paper proposes a more accurate model ...
OFET based explosive sensors using diketopyrrolopyrrole and metal organic framework composite active channel material

Rao, V. Ramgopal (Elsevier, 2016-02)

Detection of explosives using organic compounds poses many challenges, primarily because of the stability of the organic compound at nominal operating conditions. This paper addresses the aforementioned challenge by reporting ...
Physical Insights Into the Two-Stage Breakdown Characteristics of STI-Type Drain-Extended pMOS Device

Rao, V. Ramgopal (IEEE, 2015-12)

In this paper, we study breakdown characteristics in shallow-trench isolation (STI)-type drain-extended MOSFETs (DeMOS) fabricated using a low-power 65-nm triple-well CMOS process with a thin gate oxide. Experimental data ...
Spin-coatable, photopatternable magnetic nanocomposite thin films for MEMS device applications

Rao, V. Ramgopal (RSC, 2015)

Magnetic nanomaterials' (especially metals) air stability and compatibility with standard micro-fabrication technologies are often a concern for development of MEMS-based magnetic devices. In this paper, we report an ...
Design of Well Doping Profile for Improved Breakdown and Mixed-Signal Performance of STI-Type DePMOS Device

Rao, V. Ramgopal (IEEE, 2015-12)

Shallow-trench isolation drain extended pMOS (STI-DePMOS) devices show a distinct two-stage breakdown. The impact of p-well and deep-n-well doping profile on breakdown characteristics is investigated based on TCAD simulations. ...
A Thermal Aware Device Design Considerations for Nano-scale SOI and Bulk FinFETs

Rao, V. Ramgopal (IEEE, 2016-01)

Thermal performance characteristics of fin-shaped FETs (FinFETs) are studied and analyzed in this paper for sub-22-nm technologies using the well-calibrated TCAD simulations. In this paper, we show that bulk FinFETs have ...
Low power, area efficient, and temperature-variation tolerant bidirectional current source for sensor applications

Rao, V. Ramgopal (Elsevier, 2016-03)

This paper presents a novel temperature invariant, low power, and area efficient bidirectional current source. The current source can be used as an analog front end R–V converter for different types of resistive sensor ...
Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability

Rao, V. Ramgopal (IEEE, 2016-03)

In this paper, we present a variability-aware 3-D mixed-mode device simulation study of Si gate-all-around (GAA) nanowire MOSFET (NWFET)-based 6-T static random access memory (SRAM) bit-cell stability and performance ...
On the Geometrically Dependent Quasi-Saturation and gm Reduction in Advanced DeMOS Transistors

Rao, V. Ramgopal (IEEE, 2016-04)

This paper reveals an early quasi-saturation (QS) effect attributed to the geometrical parameters in shallow trench isolation-type drain-extended MOS (STI-DeMOS) transistors in advanced CMOS technologies. The quasi-saturation ...
Asymmetric immobilization of antibodies on a piezo-resistive micro-cantilever surface

Rao, V. Ramgopal (RSC, 2016)

For cantilever-based MEMS sensors, selective chemical modification of the sensing surface is used for the detection of chemical and biological analytes. One of the key challenges in these kind of applications is to obtain ...
A MEMS-based shifted membrane electrodynamic microsensor for microphone applications

Rao, V. Ramgopal (Sage, 2016-03)

In this paper we present a multidisciplinary modeling of a MEMS-based electrodynamic microsensor, when an additional vertical offset is defined, aiming acoustic applications field. The principle is based on the use of two ...
A Vapor Phase Self-Assembly of Porphyrin Monolayer as a Copper Diffusion Barrier for Back-End-of-Line CMOS Technologies

Rao, V. Ramgopal (IEEE, 2016)

We integrate the first vapor phase self-assembled monolayer (VPSAM) of hydroxy-phenyl zinc porphyrin (ZnTPPOH) on the interlayer dielectric materials and investigate its properties as a copper diffusion barrier. The ZnTPPOH ...
On the Improved High-Frequency Linearity of Drain Extended MOS Devices

Rao, V. Ramgopal (IEEE, 2016-11)

Based upon two-tone measurements, 5dB improvement in the linearity behavior of drain extended MOS (DeMOS) device is reported by novel drain engineering. The presented modification significantly improves the device saturation ...
H2S detection using low-cost SnO2 nano-particle Bi-layer OFETs

Rao, V. Ramgopal (Elsevier, 2016-11)

In this article, a unique platform with an organic field-effect transistor (OFET) integrated with metal oxide nanoparticles for sensing of H2S gas is presented. Metal oxide nanoparticles such as SnO2 and ZnO synthesized ...

Now showing items 381-400 of 1651

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