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Department of Electrical and Electronics Engineering: Recent submissions

Now showing items 481-500 of 1659

Suppression of Ambipolar Behavior and Simultaneous Improvement in RF Performance of Gate-Overlap Tunnel Field Effect Transistor (GOTFET) Devices

Vidhyadharan, Sanjay (Springer, 2020-07)

This paper investigates a method to suppress the ambipolar current Iamb effectively, enhance the device performance with higher on current Ion, lower off current Ioff, lower inverse subthreshold slope SS and simultaneously ...
An innovative ultra-low voltage GOTFET based regenerative-latch Schmitt trigger

Vidhyadharan, Sanjay (Elsevier, 2020-10)

This paper introduces an innovative Gate-Overlap Tunnel FET (GOTFET) device which is an advanced TFET engineered to yield around double the on current Ion, while the off current Ioff remains around an order lower, than ...
TiO2−x–TiO2 Memristor Applications for Programmable Analog VLSI Circuits at 45 nm CMOS Technology Node

Vidhyadharan, Sanjay (Springer, 2020-10)

Memristor-CMOS (MCM) technology combines CMOS processing with nano-scale memristors enabling a significant reduction in the silicon area as compared to CMOS-only counterparts. Moreover, the non-volatile memory characteristics ...
An ultra-low-power CNFET based dual VDD ternary dynamic Half Adder

Vidhyadharan, Sanjay (Elsevier, 2021-01)

This paper presents an ultra-low-power ternary dynamic Half Adder (HA) design which consumes merely 83 nW of power, achieving a 66–90% reduction in power consumption as compared to the other designs reported in the literature. ...
An Efficient Ultra-Low-Power and Superior Performance Design of Ternary Half Adder Using CNFET and Gate-Overlap TFET Devices

Vidhyadharan, Sanjay (IEEE, 2021-01)

This paper presents a novel ultra-low power yet high-performance device and circuit design paradigm for implementing ternary logic based circuits using Gate-Overlap Tunnel FETs (GOTFETs) and Carbon Nanotube FETs (CNFETs). ...
CNFET-Based Ultra-Low-Power Dual-VDD Ternary Half Adder

Vidhyadharan, Sanjay (Springer, 2021-02)

This paper proposes a carbon nanotube FET (CNFET)-based ultra-low-power dual-VDD ternary half adder (HA) circuit. The proposed design utilizes both the available ternary power supply voltages (VDD & VDD/2) and prevents ...
An ultra-low-power CNFET-based improved Schmitt triggerdesign for VLSI sensor applications

Vidhyadharan, Sanjay (Wiley, 2020-11)

To enable easy integration of Internet of Things (IoT) sensors with digital verylarge scale integrtaion (VLSI) circuits, the interface circuits need to operateefficiently even at low power supply voltages, consuming minimum ...
Improved hetero-junction TFET-based Schmitt trigger designs for ultra-low-voltage VLSI applications

Vidhyadharan, Sanjay (Emerald, 2021-03)

Tunnel field effect transistors (TFETs) have significantly steeper sub-threshold slope (24–30 mv/decade), as compared with the conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), which have a ...
A novel ultra-low-power CNTFET and 45 nm CMOS based ternary SRAM

Vidhyadharan, Sanjay (Elsevier, 2021-05)

This paper presents a CNTFET based ultra-low-power ternary SRAM design which consumes merely 66 nW of power, achieving 84–98% reduction in power consumption as compared to the other CNTFET ternary SRAM designs reported in ...
Mux Based Ultra-Low-Power Ternary Adders and Multiplier implemented with CNFET and 45 nm MOSFETs

Vidhyadharan, Sanjay (Taylor & Francis, 2021-04)

This paper presents improved multiplexer-based ultra-low-power ternary Half Adder (HA), ternary Full Adder (FA), and ternary 1-bit multiplier designs. The proposed circuits consume 61–91% lesser power and can be implemented ...
Memristor–CMOS hybrid ultra-low-power high-speed multivibrators

Vidhyadharan, Sanjay (Springer, 2021-05)

Memristor–CMOS (MCM) technology enables fabrication of thin film memristors over the conventional CMOS devices and has the potential to significantly reduce the silicon-area and propagation delays in VLSI chips. The memristor ...
Gate-Overlap Tunnel Field-Effect Transistors (GOTFETs) for Ultra-Low-Voltage and Ultra-Low-Power VLSI Applications

Vidhyadharan, Sanjay (CRC, 2021)

The advancement in complementary metal oxide semiconductor (CMOS) technology during the last few decades has enabled scaling down of the metal oxide semiconductor field-effect transistor (MOSFET) feature size to below the ...
CNFET Based Ultra-Low-Power Schmitt Trigger SRAM for Internet of Things (IoT) Applications

Vidhyadharan, Sanjay (Springer, 2021-09)

This paper presents Carbon Nanotube FET (CNFET) based ultra-low-power Schmitt trigger SRAM designs which can operate at voltage levels as low as 200 mV, with high Static Noise Margins (STM) of 100–120 mV. The hysteresis ...
Fast and Low-Power CMOS and CNFET based Hysteresis Voltage Comparator

Vidhyadharan, Sanjay (Taylor & Francis, 2023-01)

This paper presents CMOS and CNFET based hysteresis voltage comparators for low-voltage applications. The proposed CMOS and CNFET hysteresis comparators require merely 1.6 and 0.26 µW of power, respectively, which is less ...
PAT image reconstruction using augmented sparsity regularization with practicable tuning of regularization weight

Rejesh, Nadaparambil Aravindakshan (ARXIV, 2021-05)

Among all tissue imaging modalities, photo-acoustic tomography (PAT) has been getting increasing attention in the recent past due to the fact that it has high contrast, high penetrability, and has capability of retrieving ...
Photo-acoustic tomographic image reconstruction from reduced data using physically inspired regularization

Rejesh, Nadaparambil Aravindakshan (IOP, 2020-12)

We propose a model-based image reconstruction method for photoacoustic tomography (PAT) involving a novel form of regularization and demonstrate its ability to recover good quality images from significantly reduced size ...
Photoacoustic and thermoacoustic signal characteristics study

Rejesh, Nadaparambil Aravindakshan (OSA Open Access, 2013)

Photoacoustic/thermoacoustic imaging is an emerging hybrid imaging modality combining optical/microwave imaging with ultrasound imaging. The photoacoustic/thermoacoustic signal generated are affected by the nature of ...
Deconvolution-based deblurring of reconstructed images in photoacoustic/thermoacoustic tomography

Rejesh, Nadaparambil Aravindakshan (OSA Open Access, 2013)

Photoacoustic/thermoacoustic tomography is an emerging hybrid imaging modality combining optical/microwave imaging with ultrasound imaging. Here, a 𝑘-wave MATLAB toolbox was used to simulate various configurations of ...
Highly Sensitive and Selective H2 Gas Sensor Based on Pd-Pt Decorated Nanostructured Silicon Carbide Thin Films for Extreme Environment Application

Mourya, Satyendra Kumar (World Academy of Science, Engineering and Technology, 2007-01)

Present work describes the fabrication and sensing characteristics of the Pd-Pt decorated nanostructured silicon carbide (SiC) thin films on anodized porous silicon (PSi) substrate by RF magnetron sputtering. The gas sensing ...
Enhanced Optical Absorbance Of Hydrophobic Ti Thin Film: Role Of Surface Roughness

Mourya, Satyendra Kumar (IJMS, 2016)

In the present work, structural, morphological, optical and wettability properties of DC magnetron sputtered titanium (Ti) thin films have been investigated. The nanostructured Ti thin films were deposited on glass and ...

Now showing items 481-500 of 1659

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