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Department of Electrical and Electronics Engineering: Recent submissions

Now showing items 681-700 of 2012

On the Behavior of STI-Type DeNMOS Device Under ESD Conditions

Rao, V. Ramgopal (IEEE, 2010-09)

We present experimental and simulation studies of shallow trench isolation (STI)-type drain-extended n-channel metal-oxide-semiconductor devices under human body model (HBM)-like electrostatic discharge (ESD) conditions. ...
Insights Into the Design and Optimization of Tunnel-FET Devices and Circuits

Rao, V. Ramgopal (IEEE, 2011-04)

Improving the on-current has been the focus of enhancing the performance of tunnel field-effect transistors (TFETs). In this paper, we show that the increase in I_ON is not sufficient to improve the circuit performance ...
Complementary Organic Circuits Using Evaporated F16CuPc and Inkjet Printing of PQT

Rao, V. Ramgopal (IEEE, 2010)

Organic complementary inverters and ring oscillators are fabricated using a unique combination of inkjet printing and evaporation of organic semiconductors. p-Type poly (3, 3'''-didodecylquaterthiophene) (PQT) is inkjet ...
Low-Operating-Voltage Operation and Improvement in Sensitivity With Passivated OFET Sensors for Determining Total Dose Radiation

Rao, V. Ramgopal (IEEE, 2010-12)

Using high- k material in a gate dielectric stack, low-operating-voltage organic semiconducting material sensors for determining total dose radiation are proposed. To improve the stability of organic semiconducting layer ...
A Binary Tunnel Field Effect Transistor with a Steep Sub-threshold Swing and Increased ON Current

Rao, V. Ramgopal (IOP, 2010)

A variant tunnel field effect transistor structure called the binary tunnel field effect transistor (BTFET) for low voltage and near ideal switching characteristics is proposed. The BTFET relies on a binary tunneling ...
Journal of Micromechanics and Microengineering A novel technique for microfabrication of ultra-thin affinity cantilevers for characterization with an AFM

Rao, V. Ramgopal (IOP, 2010)

A novel, low-cost microfabrication technique for ultra-thin affinity cantilevers to be characterized using an atomic force microscope (AFM) has been demonstrated. Compared to its counterparts reported in the literature, ...
A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device

Rao, V. Ramgopal (IEEE, 2010-12)

We investigated the surface band-to-band tunnelling (BTBT) current under the off-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was ...
Modeling, Simulation, and Design Guidelines for Piezoresistive Affinity Cantilevers

Rao, V. Ramgopal (IEEE, 2011-06)

This paper presents design guidelines for piezoresistive affinity cantilevers for operation in liquid environments. For the first time, we consider the interdependence of various functional elements (such as biological, ...
Poly(3-hexylthiophene) and hexafluoro-2-propanol-substituted polysiloxane based OFETs as a sensor for explosive vapor detection

Rao, V. Ramgopal (Elsevier, 2011-11)

The organic field effect transistors (OFETs) with regioregular poly 3-hexylthiophene (rr-P3HT) and hexafluoro-2-propanol-substituted polysiloxane (SXFA) as an organic layer, have been used for detection of explosive vapors ...
Toward System on Chip (SoC) Development Using FinFET Technology: Challenges, Solutions, Process Co-Development & Optimization Guidelines

Rao, V. Ramgopal (IEEE, 2011-06)

In this paper, the impact of process/technology co-optimization on System-on-Chip (SoC) performance using detailed 3-D process/device simulations has been studied for nanoscale FinFET devices. We investigated challenges ...
A Tunnel FET for VDD Scaling Below 0.6 V With a CMOS-Comparable Performance

Rao, V. Ramgopal (IEEE, 2011-07)

We propose a modified structure of tunnel field-effect transistor (TFET), called the sandwich tunnel barrier FET (STBFET). STBFET has a large tunneling cross-sectional area with a tunneling distance of ~2 nm. An ...
Fabrication of La0.7Sr0.3MnO3–Si Heterojunctions Using a CMOS-Compatible Citric Acid Etch Process

Rao, V. Ramgopal (IEEE, 2011-03)

We report La 0.7 Sr 0.3 MnO 3 (LSMO)-Si heterojunctions fabricated using a new etch process that is compatible with standard CMOS technology. For a p-n-junction device fabrication, complete etch of a masked LSMO film was ...
A novel architecture for improving slew rate in FinFET-based op-amps and OTAs

Rao, V. Ramgopal (Elsevier, 2011-05)

A new architecture for improvement of slew rate (SR) of an op-amp or an operational transconductance amplifier (OTA) in FinFET technology is proposed. The principle of operation of the proposed architecture is based on a ...
Organic Sensor Platforms for Environmental and Security Applications

Rao, V. Ramgopal (IOP, 2011)

Organic sensors based on polymer microcantilevers and organic field effect transistors (OFETs) bring orthogonality to the sensing mechanism for different environmental and security applications. Orthogonolity is an important ...
Photoplastic microcantilever sensor platform for explosive detection

Rao, V. Ramgopal (World Scientific, 2011)

We present an ultrasensitive and cost effective polymeric microcantilever sensor platform for explosive vapor detection. These sensors were fabricated using SU-8 polymer composite materials with two transduction approaches ...
Nanotechnology Polymer nanocomposite nanomechanical cantilever sensors: material characterization, device development and application in explosive vapour detection

Rao, V. Ramgopal (IOP, 2011-06)

This paper reports an optimized and highly sensitive piezoresistive SU-8 nanocomposite microcantilever sensor and its application for detection of explosives in vapour phase. The optimization has been in improving its ...
Mobility enhancement of solution-processed Poly(3-Hexylthiophene) based organic transistor using zinc oxide nanostructures

Rao, V. Ramgopal (Elsevier, 2012-04)

This work reports the mobility enhancement of p-type organic transistors formed using Poly(3-Hexylthiophene) (P3HT) using the dispersion of ZnO (zinc oxide) nanostructures. The ZnO nanostructures considered here are nanorods ...
Current Excitation Method for ΔR Measurement in Piezo-Resistive Sensors With a 0.3-ppm Resolution

Rao, V. Ramgopal (IEEE, 2012-03)

This paper presents a new highly sensitive (10 μV/ppm) bidirectional current excitation method for piezo-resistive sensor measurements, through excitation of two half bridges for Δ R measurement. The proposed circuit is ...
“Organic CantiFET”: A Nanomechanical Polymer Cantilever Sensor With Integrated OFET

Rao, V. Ramgopal (IEEE, 2012-04)

Nanomechanical cantilever based biochemical sensors translate molecular interactions into nanomechanical motions that can be measured by different transduction techniques. Improved sensitivity, reliability, and also cost ...
Electrical actuation and readout in a nanoelectromechanical resonator based on a laterally suspended zinc oxide nanowire

Rao, V. Ramgopal (IOP, 2012)

In this paper, we present experimental results describing enhanced readout of the vibratory response of a doubly clamped zinc oxide (ZnO) nanowire employing a purely electrical actuation and detection scheme. The measured ...

Now showing items 681-700 of 2012

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