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Browsing Department of Physics by Subject "InGaN quantum dots"

Browsing Department of Physics by Subject "InGaN quantum dots"

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  • A novel approach for the growth of InGaN quantum dots 
    Gangopadhyay, Subhashis (Wiley, 2006-11)
    A novel two-step growth method for creating InGaN quantum dots (QDs) was developed by using a combination of an Inx Ga1–x N nucleation layer with a platelet structure and an Iny Ga1–y N formation layer with an indium content ...
  • Two-step growth of InGaN quantum dots and application to light emitters 
    Gangopadhyay, Subhashis (Wiley, 2007-06)
    A two-step growth method for creating InGaN quantum dots (QDs) was developed by using a combination of an InxGa1–xN nucleation layer (NL) without island structures and an InyGa1–yN formation layer (FL) with an indium content ...

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