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Chemical Processes at Clean {1010} ZnO Surfaces Part 1.—Thermal Production of Surface Defects

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dc.contributor.author Green, Mino
dc.contributor.author Lauks, Iments R.
dc.date.accessioned 2025-11-19T09:28:38Z
dc.date.available 2025-11-19T09:28:38Z
dc.date.issued 1978
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/20107
dc.description.abstract Oxygen loss from single crystal ZnO {1010} surfaces has been investigated using the method of thermally programmed desorption (t.p.d.). The t.p.d. parameters (peak area, shape, width at half height and temperature of the maximum) have been analysed in terms of O2 and Zn loss kinetics from the outermost surface atoms of the crystal only. A reaction mechanism is proposed in which both positive surface oxygen vacancies and neutral surface step sites are formed, and in which the reaction kinetics are dependent upon the fractional concentration of both kinds of surface defect (θ and θss). The maximum value of θ is 4 % and θss is ∼20 %. en_US
dc.language.iso en en_US
dc.publisher Journal of the Chemical Society : Faraday Transaction - I. The Chemical Society, London. 1978, 74 (09-12) en_US
dc.subject Chemistry en_US
dc.subject Chemical process en_US
dc.subject Thermal production en_US
dc.subject Journal of the Chemical Society : Faraday Transaction - I en_US
dc.subject Surface defects en_US
dc.title Chemical Processes at Clean {1010} ZnO Surfaces Part 1.—Thermal Production of Surface Defects en_US
dc.type Article en_US


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