Recoil Tritium Reactions with CH3SiD3: Pressure Dependent Yields

Volpe, Paolo; Casuglion, Mario

dc.contributor.author	Volpe, Paolo
dc.contributor.author	Casuglion, Mario
dc.date.accessioned	2025-11-21T18:17:04Z
dc.date.available	2025-11-21T18:17:04Z
dc.date.issued	1978
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/20207
dc.description.abstract	The T + CH3S1D3 system has been studied to evaluate the effect of reactant pressure on parent-T yield. The substitution yields for C—H and Si—D bonds have been found to be in the ratio 1 : 1.7. The decomposition rate of the excited parent-T has been calculated on the basis of the above ratio and compared with experimental yields at low pressure. Hypotheses to explain the discrepancy between calculated and experimental values are discussed.	en_US
dc.language.iso	en	en_US
dc.publisher	Journal of the Chemical Society : Faraday Transaction - I. The Chemical Society, London. 1978, 74 (04)	en_US
dc.subject	Journal of the Chemical Society : Faraday Transaction - I	en_US
dc.subject	Chemistry	en_US
dc.subject	Recoil Tritium Reactions	en_US
dc.title	Recoil Tritium Reactions with CH3SiD3: Pressure Dependent Yields	en_US
dc.type	Article	en_US