Abstract:
Studies are performed to investigate the effect of channel defects on the transfer and output characteristics of Nanowire-GAA-FETs. It is observed that the transfer characteristics can be tuned by invoking defect-induced scattering potential in the nanowire channel. Here, the channel scattering potentials chosen are step-shaped and pulse-shaped. The effect of such potentials on the energy-current spectrum of the nanowire device is also studied. It is observed that the normalized energy-current spectrum shrinks due to scattering potential. This results in the early triggering of the device saturation. Also, it is observed that the energy-current spectrum gets enhanced as the gate voltage of the device is increased. This signifies the role of channel currents of different energies in the transport mechanism. Here, the effect of channel defects on device saturation current is corroborated with the corresponding impact on the energy-current spectrum of the nanowire device. This work explains the implication of the modified energy-current spectrum under defect-induced scattering potentials and its effect on the device transfer characteristics. Hence, this idea can be extended to tailor the transfer characteristics through intentionally and unintentionally invoked channel defects on low-dimensional FETs. Also, we have studied the effect of defects on the transconductance, threshold voltage and the subthreshold swing of nanowires FETs. Here, we compared the simulated results with the experimental results of a real GAA-based biosensor.