| dc.contributor.author |
Gupta, Navneet |
|
| dc.date.accessioned |
2023-02-03T09:19:50Z |
|
| dc.date.available |
2023-02-03T09:19:50Z |
|
| dc.date.issued |
2017-10 |
|
| dc.identifier.uri |
https://link.springer.com/chapter/10.1007/978-981-10-6214-8_8 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8945 |
|
| dc.description.abstract |
Thin film transistor (TFT) plays an important role for the fabrication of highly functional active matrix backplanes for large area display applications such as organic light emitting diodes (OLEDs). Nanocrystalline silicon (nc-Si) has recently achieved lot of interest over existing hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) due to its superior properties which makes it suitable channel material for the fabrication of TFTs. In present work, the physical insight into the nc-Si TFT device characteristics and device non idealities is reported which can provide important step for the production of high performance large area display devices. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
Springer |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Thin film transistor (TFT) |
en_US |
| dc.subject |
Nanocrystalline Silicon |
en_US |
| dc.subject |
Transistor |
en_US |
| dc.title |
Electronic Behavior of Nanocrystalline Silicon Thin Film Transistor |
en_US |
| dc.type |
Book chapter |
en_US |