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Material selection methodology for radio frequency (RF) microelectromechanical (MEMS) capacitive shunt switch

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dc.contributor.author Gupta, Navneet
dc.date.accessioned 2023-02-06T04:08:05Z
dc.date.available 2023-02-06T04:08:05Z
dc.date.issued 2018-02
dc.identifier.uri https://link.springer.com/article/10.1007/s00542-018-3761-1
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8962
dc.description.abstract This paper describes the process of selecting the most optimum Radio Frequency Micro- electro- mechanical-systems (RF-MEMS) switch design using Ashby’s methodology. The switches are compared on the basis of parameters like actuation voltage, insertion loss, isolation and switching time using material selection charts. The chart shows that a low-voltage metal-to-metal contact shunt capacitive RF-MEMS having a bridge structure with Si-GaAs substrate, electroplated gold contacts and silicon nitride dielectric layer, is the most optimum of all the switches considered. en_US
dc.language.iso en en_US
dc.publisher Springer en_US
dc.subject EEE en_US
dc.subject Radio frequency (RF) en_US
dc.subject Microelectromechanical (MEMS) en_US
dc.subject Switches en_US
dc.title Material selection methodology for radio frequency (RF) microelectromechanical (MEMS) capacitive shunt switch en_US
dc.type Article en_US


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