Low-k polymer gate dielectric selection for organic thin-film transistors (OTFTs) using material selection methodologies

dc.contributor.author	Gupta, Navneet
dc.date.accessioned	2023-02-06T04:49:52Z
dc.date.available	2023-02-06T04:49:52Z
dc.date.issued	2019-05
dc.identifier.uri	https://link.springer.com/article/10.1007/s10825-019-01343-1
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8970
dc.description.abstract	Performance parameters of an organic thin-film transistor (OTFT) and their relation to the material parameters of the gate dielectric are analyzed. Based on the analysis, the surface energy, dielectric constant, glass-transition temperature, and breakdown field are identified as key parameters. Various multicriteria decision-making approaches, viz. multiobjective optimization using simple ratio analysis (MOOSRA), technique for order preference by similarity to ideal solution (TOPSIS) and Vlsekriterijumska Optimizacija I KOmpromisno Resenje (VIKOR), are used to solve the material selection problem. Various low-k polymers are analyzed, and it is observed that CYTOP is a promising gate dielectric material for OTFTs, with good agreement between the MOOSRA, VIKOR, and TOPSIS regarding this choice	en_US
dc.language.iso	en	en_US
dc.publisher	Springer	en_US
dc.subject	EEE	en_US
dc.subject	Organic thin-film transistors (OTFTs)	en_US
dc.title	Low-k polymer gate dielectric selection for organic thin-film transistors (OTFTs) using material selection methodologies	en_US
dc.type	Article	en_US

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