| dc.contributor.author |
Gupta, Navneet |
|
| dc.date.accessioned |
2023-02-06T06:37:11Z |
|
| dc.date.available |
2023-02-06T06:37:11Z |
|
| dc.date.issued |
2018-11 |
|
| dc.identifier.uri |
https://link.springer.com/chapter/10.1007/978-981-13-2553-3_57 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8972 |
|
| dc.description.abstract |
We explore the electrical properties of graphene–silicon dioxide–p–silicon Schottky junction diode using current–voltage characteristics and impedance analysis. Ideality factor, rectification ratio, and series resistance are extracted from the experimental data. A linear response of series resistance of graphene/SiO2/p-Si Schottky diode is observed with respect to change in forward bias voltage from 0 to 2 V. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
Springer |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Schottky diode |
en_US |
| dc.subject |
Graphene nanoplatelets (GNP) |
en_US |
| dc.subject |
Impedance analysis |
en_US |
| dc.subject |
Silicon |
en_US |
| dc.title |
Analysis of Graphene/SiO2/p-Si Schottky Diode by Current–Voltage and Impedance Measurements |
en_US |
| dc.type |
Article |
en_US |