| dc.contributor.author |
Gupta, Navneet |
|
| dc.date.accessioned |
2023-02-06T08:43:37Z |
|
| dc.date.available |
2023-02-06T08:43:37Z |
|
| dc.date.issued |
2016 |
|
| dc.identifier.uri |
https://eds.p.ebscohost.com/eds/detail/detail?vid=0&sid=c439d406-5d94-469a-a692-5eed10dd14f5%40redis&bdata=JkF1dGhUeXBlPWlwLHNoaWImc2l0ZT1lZHMtbGl2ZSZzY29wZT1zaXRl#AN=116834360&db=asn |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8983 |
|
| dc.description.abstract |
In this paper, the most appropriate material for MEMS Disk resonator compatible with CMOS technology is selected using the Ashby approach. Materials indices are formulated based on three primary performance parameters, namely high Q, high resonant frequency, and low process temperature. The selection chart shows that for high Q and high frequency, polySi0.35Ge0.65 is the best possible material for MEMS resonator. The close match between theoretical and experimental findings validates our proposed study. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
International Journal of Nanoelectronics & Materials |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
COMPLEMENTARY metal oxide semiconductor performance |
en_US |
| dc.subject |
MICROELECTROMECHANICAL systems |
en_US |
| dc.subject |
Resonators |
en_US |
| dc.subject |
CMOS Devices |
en_US |
| dc.subject |
Material selection |
en_US |
| dc.subject |
Mems |
en_US |
| dc.title |
Material selection for CMOS compatible high Q and high frequency MEMS disk resonator using Ashby approach. |
en_US |
| dc.type |
Article |
en_US |