| dc.contributor.author |
Gupta, Navneet |
|
| dc.date.accessioned |
2023-02-06T09:14:27Z |
|
| dc.date.available |
2023-02-06T09:14:27Z |
|
| dc.date.issued |
2015-08 |
|
| dc.identifier.uri |
https://link.springer.com/article/10.1007/s10854-015-3624-9 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/8987 |
|
| dc.description.abstract |
In this paper, various possible materials for the gate dielectric of nc-Si top-gated thin film transistor (TFT) and their material properties like dielectric constant, bandgap, conduction band offset and interface trap density are taken into consideration and Ashby’s, VlseKriterijumska Optimizacija I Kompromisno Resenje in Serbian (VIKOR) and Technique for order preference by similarity to ideal solution (TOPSIS) approaches are applied to select the most suitable gate dielectric material. The analysis results suggest that Si3N4 is the most suitable gate dielectric material for the better performance of nc-Si top-gated TFT. The results shows good agreement between Ashby’s, VIKOR and TOPSIS approaches. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
Springer |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Thin film transistor (TFT) |
en_US |
| dc.subject |
VIKOR |
en_US |
| dc.subject |
TOPSIS |
en_US |
| dc.subject |
Dielectric in nanocrystalline silicon (nc-Si) |
en_US |
| dc.title |
Investigation on material selection for gate dielectric in nanocrystalline silicon (nc-Si) top-gated thin film transistor (TFT) using Ashby’s, VIKOR and TOPSIS |
en_US |
| dc.type |
Article |
en_US |