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A novel sub-1 volt bandgap reference with all CMOS

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dc.contributor.author Gupta, Anu
dc.date.accessioned 2023-02-10T04:24:44Z
dc.date.available 2023-02-10T04:24:44Z
dc.date.issued 2008-07
dc.identifier.uri https://dl.acm.org/doi/10.5555/1576429.1576475
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9135
dc.description.abstract This paper deals with the design of novel sub-1-V bandgap reference circuit using only MOS transistors in 0.18 µm CMOS technology, for a supply voltage of 1.8V. The circuit produces a voltage reference of 466.5 mV at 27°C with a temperature coefficient of 28.4 ppm/°C in the range of -20 to +120°C. The power supply rejection of circuit is -30 dB at 8 KHz and this rejection further increase to -50 dB at 10 KHz. Power dissipation is 3.98 µW. The circuit is also tested at four process corners. Circuit is simulated with Eldo SPICE. en_US
dc.language.iso en en_US
dc.publisher ACM Digital Library en_US
dc.subject EEE en_US
dc.subject C-CMOS en_US
dc.subject Bandgap en_US
dc.title A novel sub-1 volt bandgap reference with all CMOS en_US
dc.type Article en_US


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