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Improved Implementation of CRL and SCRL Gates for Ultra Low Power

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dc.contributor.author Gupta, Anu
dc.date.accessioned 2023-02-10T04:30:38Z
dc.date.available 2023-02-10T04:30:38Z
dc.date.issued 2009
dc.identifier.uri https://ieeexplore.ieee.org/document/5328051
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9136
dc.description.abstract Working with low frequency universal charge recovery logic (CRL) based NAND gate, the leakage current results in gradual charge up of the output node resulting in an incorrect output. A better implementation of the same circuit which increases the output resistance for the leakage current is used to mitigate this drawback in this paper. Also an analysis of the effect of rise time of clock edge on power dissipation of the split charge recovery logic (SCRL) based NAND gates has also been done. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject Leakage current en_US
dc.subject Circuits en_US
dc.subject Frequency en_US
dc.subject Rails en_US
dc.subject Logic en_US
dc.subject Power engineering and energy en_US
dc.title Improved Implementation of CRL and SCRL Gates for Ultra Low Power en_US
dc.type Article en_US


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