dc.contributor.author |
Gupta, Anu |
|
dc.date.accessioned |
2023-02-10T10:01:28Z |
|
dc.date.available |
2023-02-10T10:01:28Z |
|
dc.date.issued |
2013 |
|
dc.identifier.uri |
https://ieeexplore.ieee.org/document/6725898 |
|
dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9152 |
|
dc.description.abstract |
Carbon Nanotube Field-Effect Transistor (CNTFET) with high mobility due to ballistic transport operation and low OFF current capability has proved to be a promising alternate to the conventional CMOS technology. This paper presents a design, performance assessment and comparative analysis for CNTFET based Dynamic Ternary Content Addressable Memory (DTCAM) cell. This cell is capable of storing and searching three logic values: zero (0), one (1), and don't care (X). Hspice simulation results are reported to show that the three memory operations of the proposed CAM cell perform correctly at 0.9 V power supply. It is also shown that the presented memory design achieves a significant improvement in read, write and search delay by 86%, 75% and 51% respectively, with a power increase of 21% only compared to its CMOS counterpart at 32 nm technology. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
IEEE |
en_US |
dc.subject |
EEE |
en_US |
dc.subject |
CNTFETs |
en_US |
dc.subject |
CMOS integrated circuits |
en_US |
dc.subject |
Logic gates |
en_US |
dc.subject |
Computer aided manufacturing |
en_US |
dc.subject |
Integrated circuit modeling |
en_US |
dc.subject |
Electron tubes |
en_US |
dc.title |
Performance evaluation of CNTFET based Dynamic Ternary Content Addressable Memory cell |
en_US |
dc.type |
Article |
en_US |