dc.contributor.author |
Gupta, Anu |
|
dc.date.accessioned |
2023-02-11T04:01:54Z |
|
dc.date.available |
2023-02-11T04:01:54Z |
|
dc.date.issued |
2017 |
|
dc.identifier.uri |
https://ieeexplore.ieee.org/document/8068658 |
|
dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9168 |
|
dc.description.abstract |
This paper presents a novel technique to achieve an effective capacitance, multiples of up to 40 times that of a capacitor embedded in electronic circuits thus minimizing the area of silicon die. The technique employed for multiplication is PMOS transistor based low-voltage cascode current mirroring consuming low-power. The proposed design, capable of achieving high multiplication factors, is simulated in Cadence using 180nm technology library. An application of the capacitance multiplier shifting the dominant pole by 254kHz of a 19.7dB gain common source amplifier is also presented. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
IEEE |
en_US |
dc.subject |
EEE |
en_US |
dc.subject |
Capacitance multiplier |
en_US |
dc.subject |
Low-voltage cascode mirroring |
en_US |
dc.subject |
Dominant pole |
en_US |
dc.title |
Current-Mode PMOS capacitance multiplier |
en_US |
dc.type |
Article |
en_US |