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Design of a Static Current Simulator Using Device Matrix Approach

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dc.contributor.author Asati, Abhijit
dc.date.accessioned 2023-03-03T05:26:30Z
dc.date.available 2023-03-03T05:26:30Z
dc.date.issued 2012
dc.identifier.uri https://ieeexplore.ieee.org/abstract/document/6526582
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9458
dc.description.abstract I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB ® . en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject Device simulator en_US
dc.subject I-V characteristics en_US
dc.subject Device matrix en_US
dc.subject MATLAB® en_US
dc.title Design of a Static Current Simulator Using Device Matrix Approach en_US
dc.type Article en_US


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