dc.contributor.author |
Hazra, Arnab |
|
dc.date.accessioned |
2023-03-13T04:03:50Z |
|
dc.date.available |
2023-03-13T04:03:50Z |
|
dc.date.issued |
2015-06 |
|
dc.identifier.issn |
https://ieeexplore.ieee.org/document/7100894 |
|
dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9656 |
|
dc.description.abstract |
This paper reports on the influence of junction geometry on the determination of the rectification performance of nanostructured titanium dioxide (TiO 2 )-based p-n homojunctions. Two types of p-n junction devices with different junction area/geometry were fabricated. Sol-gel grown undoped TiO 2 nanoparticle layer was employed as the p-type side in both the cases. Electrochemically grown TiO 2 nanotube array was used as the n-type side in one junction, while thermally grown n-TiO 2 thin film was used in another. It was found that, due to unique advantage of excessively large junction area, p-TiO 2 /n-TiO 2 nanotube device offered a dramatically improved ideality factor (4) and a rectification factor (1093) compared with its p-TiO 2 /n-TiO 2 (thermally grown) counterpart (17 and 34, respectively). The 2-D distribution probability of the depletion region in the case of the first device was empirically correlated with the experimental findings and was supported by the corresponding C-V measurement results. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
IEEE |
en_US |
dc.subject |
EEE |
en_US |
dc.subject |
Electrochemical n-titanium dioxide (TiO₂) nanotubes |
en_US |
dc.subject |
Improved rectification |
en_US |
dc.subject |
Junction geometry |
en_US |
dc.subject |
p-n homojunction |
en_US |
dc.subject |
sol-gel p-TiO₂ |
en_US |
dc.subject |
Thermal n-TiO₂ |
en_US |
dc.title |
Role of Junction Geometry in Determining the Rectification Performance of Nanostructured TiO2-Based p-n Junctions |
en_US |
dc.type |
Article |
en_US |