dc.contributor.author |
Hazra, Arnab |
|
dc.date.accessioned |
2023-03-13T09:48:06Z |
|
dc.date.available |
2023-03-13T09:48:06Z |
|
dc.date.issued |
2013-12 |
|
dc.identifier.uri |
https://ieeexplore.ieee.org/abstract/document/6727683 |
|
dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9675 |
|
dc.description.abstract |
In this present investigation nanocrystalline TiO 2 based sensor was developed for low ppm level (10-100) acetone detection. TiO 2 thin film (Thickness: 1 μm) was prepared by solgel technique and deposited on the p-Si substrate (5 Ωcm, (100)) by dip coating method. Film was annealed at 450°C for 3 hours in air environment. XRD and FESEM study confirmed the (101) anatase growth with ~6-9 nm particle size. Pd electrode was deposited on the TiO 2 sensing layer to prepare the Pd/TiO 2 /p-Si Metal-Insulator-Semiconductor (MIS) device structure. A detailed acetone sensor study was performed for this MIS device in the temperature range of 100 to 200°C. Sensor showed a repeatable sensing performance with a appreciably fast response time of 7.7 s at 100°C towards 10 ppm acetone with corresponding recovery time of 13 s at 200°C in 10 ppm acetone. Response magnitude was increased from 3.2% to 6.4% with increasing the acetone concentration from 10 to 100 ppm at 200°C. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
IEEE |
en_US |
dc.subject |
EEE |
en_US |
dc.subject |
Nanocrystalline TiO2 |
en_US |
dc.subject |
MIS device |
en_US |
dc.subject |
Acetone sensing |
en_US |
dc.subject |
Low operating temperature |
en_US |
dc.title |
Low temperature low ppm acetone detection by Pd/TiO2/p-Si Metal-Insulator-Semiconductor devices |
en_US |
dc.type |
Article |
en_US |