dc.contributor.author |
Chaturvedi, Nitin |
|
dc.date.accessioned |
2023-03-14T10:14:47Z |
|
dc.date.available |
2023-03-14T10:14:47Z |
|
dc.date.issued |
2020-10 |
|
dc.identifier.uri |
https://www.emerald.com/insight/content/doi/10.1108/CW-09-2018-0073/full/html |
|
dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/9716 |
|
dc.description.abstract |
Emerging event-driven applications such as the internet-of-things requires an ultra-low power operation to prolong battery life. Shutting down non-functional block during standby mode is an efficient way to save power. However, it results in a loss of system state, and a considerable amount of energy is required to restore the system state. Conventional state retentive flip-flops have an “Always ON” circuitry, which results in large leakage power consumption, especially during long standby periods. Therefore, this paper aims to explore the emerging non-volatile memory element spin transfer torque-magnetic tunnel junction (STT-MTJ) as one the prospective candidate to obtain a low-power solution to state retention. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Emerald |
en_US |
dc.subject |
EEE |
en_US |
dc.subject |
D flip-flops |
en_US |
dc.subject |
Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) |
en_US |
dc.title |
Energy-efficient data retention in D flip-flops using STT-MTJ |
en_US |
dc.type |
Article |
en_US |