| dc.description.abstract |
In this work, a simulation-based analysis and performance comparison of the Gate All Around Nanowire FET (GAA NW FET) has been carried out for Si, GaN, and ZnO-based GAA NW FET. The Ion/Ioff ratio was found to be 10 5 , 10 9 , and 10 8 for Si, GaN, and ZnO NW FET, respectively. A reduction of 47.42% for GaN NW FET and 6.53% for ZnO NW FET were observed against Si NW FET in the SS value. For DIBL analysis, a reduction of 23.75% for GaN NW FET and 1.67% for ZnO NW FET were observed against Si NW FET. The study concludes that integrated amalgamation of the excellent material properties of GaN with nanowire structure makes GaN NW FET an intriguing option for the next generation digital logic applications. |
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