Department of Chemical Engineering
Permanent URI for this collectionhttp://localhost:4000/handle/123456789/1923
Browse
2 results
Search Results
Item Effect of rare earth doping on sol-gel derived PZT thin films(Taylor & Francis, 2000-09-04) Roy, BanasriWe have studied the effect of rare earth dopants (Nd, Gd and Ce) on the phase formation behavior and electrical properties of sol-gel derived Pb1.05(Zr0.53Ti0.47)O3 thin films. In all these films the perovskite phase is obtained up to 5 at% doping and beyond that pyrochlore phase was found to coexist with the perovskite phase. Ce and Gd doping(1-2 at%) exhibited improved ferroelectric and dielectric properties as compared to the undoped PZT films. Nd doping (2 at%) was found to be effective to increase the retained switchable polarization of undoped PZT from 63% to 84%. The transition temperature of undoped PZT film was found to be reduced with Nd doping. The Nd doped films also exhibited typical relaxor behavior and a diffuse phase transition, characteristic of the relaxor material. Introduction of Nd into the PZT lattice probably introduces disorder in the B site of ABO3 lattice which causes the observed relaxor behaviorItem Phase transformations in sol-gel prepared PZT and PLT thin films upon isothermal treatments at different temperatures(Taylor & Francis, 1998-08-24) Roy, BanasriPhases formed upon isothermal treatments of sol-gel prepared PZT andPLT films at different temperatures have been determined. In PZT, the sequence of phase formation with increased temperature is found to be: Amorphous → Amorphous + Pyrochlore + PbO → Pyrochlore + PbO → Pyrochlore + PbO + Perovskite → PbO + Perovskite → Perovskite. In the PLT films no PbO phase is found to form and the region in which the pyrochlore phase forms is very limited. TIT diagrams for both the films are proposed.