Department of Physics

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Author: search.filters.author.Pande, Surojit

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    Graphitic-carbon nitride support for the synthesis of shape-dependent ZnO and their application in visible light photocatalysts
    (RSC, 2015-09) Pande, Surojit; Gangopadhyay, Subhashis
    Shape-dependent synthesis of ZnO has been developed on the surface of g-C3N4 following a simple and reproducible strategy. Initially, graphitic-carbon nitride (g-C3N4) was synthesized by pyrolysis of urea which was further used to grow ZnO nanostructures via refluxing conditions. Different hydrolyzing agents, such as hexamethylenetetramine (HMT) and ammonia were used to synthesize dumbbell and cone structures, respectively. Apart from hydrolyzing agents, cetyltrimethylammoniumbromide (CTAB) was also used as a growth controlling agent. Structural, morphological and optical characterizations of the as-synthesized materials were performed by using FESEM, TEM, XRD, XPS, UV-vis etc. techniques. After successful synthesis, the as-synthesized heterostructures were explored as visible light driven photocatalysts towards organic pollutant (methylene blue and phenol) degradation. The photocatalytic performances of bare ZnO, dumbbell and cone structures of g-C3N4/ZnO as well as g-C3N4, have been examined thoroughly. Photocatalytic results revealed that g-C3N4/ZnO heterostructures exhibit a higher efficiency under the illumination of visible light as compared to pure g-C3N4. Superior photodegradation activity of the g-C3N4/ZnO heterostructure originated from the synergistic effect and high charge separation at the interface of g-C3N4 and ZnO has also been discussed.
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    Oxidation mechanism of thin Cu films: A gateway towards the formation of single oxide phase
    (AIP, 2018) Gangopadhyay, Subhashis; Pande, Surojit
    Controlled thermal oxidations of thin copper films at relatively lower temperatures (up to 500°C) leading towards the formation of a single phase of copper oxide are investigated where the oxidation temperature, duration, oxygen partial pressure, film thickness and the crystallographic orientations play very crucial roles to significantly control the final phase of the copper oxide. Thin Cu films of thicknesses 100-1000 nm were deposited on glass and silicon substrates using the vacuum assisted thermal evaporation technique. Oxidations of those Cu films were performed at different temperatures for variable durations in air ambient as well as oxygen ambient conditions. Four probe resistivity measurement, x-ray diffraction (XRD), Raman spectroscopy, ultraviolet–visible (UV-Vis) spectroscopy, scanning electron microscopy (SEM) and x-ray photoemission spectroscopy (XPS) techniques have been used to characterize the oxide films. At a thermodynamic equilibrium, it has been observed that the oxide phase is solely determined by the oxidation temperature, however, the oxygen partial pressure can significantly alter this temperature range. In case of thermal oxidation in air, the initial oxidation of the copper films starts at about 150 °C, but a well ordered crystalline phase of the cuprous oxide (Cu2O) is observed only above 200 °C. However, the cupric oxide (CuO) phase starts to appear only above 320 °C. The details of the oxidation mechanism of the Cu film are explained with a probable schematic model in terms of thermal diffusion as well as the chemical reactivity.